NTD20N06L-1G
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onsemi NTD20N06L-1G

Manufacturer No:
NTD20N06L-1G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 20A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD20N06L-1G is a high-performance, N-Channel, logic-level power MOSFET produced by onsemi. This device is designed for low-voltage, high-speed switching applications and is available in DPAK and IPAK packages. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The NTD20N06L-1G is AEC Q101 qualified and is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability in automotive and industrial applications.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS±15Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms)VGS±20Vdc
Drain Current - Continuous @ TA = 25°CID20Adc
Drain Current - Continuous @ TA = 100°CID10Adc
Drain Current - Single Pulse (tp ≤ 10 μs)IDM60Apk
Total Power Dissipation @ TA = 25°CPD60W
Operating and Storage Temperature RangeTJ, Tstg-55 to +175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS128mJ
Thermal Resistance - Junction-to-CaseRθJC2.5°C/W
Thermal Resistance - Junction-to-Ambient (Note 1)RθJA80°C/W
Maximum Lead Temperature for SolderingTL260°C

Key Features

  • AEC Q101 Qualified for the NTDV20N06L variant, ensuring reliability in automotive applications.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • Low on-resistance (RDS(on)) of 39 mΩ typical at VGS = 5.0 Vdc and ID = 10 Adc.
  • High drain current capability of up to 20 A continuous at TA = 25°C.
  • High-speed switching with low gate charge and fast switching times.
  • Available in DPAK and IPAK packages, offering flexibility in design.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06L-1G? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 20 Adc.
  3. Is the NTD20N06L-1G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  4. What are the typical applications of the NTD20N06L-1G? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 2.5 °C/W.
  6. What is the maximum lead temperature for soldering? The maximum lead temperature for soldering is 260 °C.
  7. What is the single pulse drain-to-source avalanche energy? The single pulse drain-to-source avalanche energy is 128 mJ.
  8. What is the typical on-resistance at VGS = 5.0 Vdc and ID = 10 Adc? The typical on-resistance is 39 mΩ.
  9. Is the NTD20N06L-1G AEC Q101 qualified? Yes, the NTDV20N06L variant is AEC Q101 qualified.
  10. What are the package options for the NTD20N06L-1G? The device is available in DPAK and IPAK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
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NTD20N06L-001
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MOSFET N-CH 60V 20A IPAK
NTD20N06L-1G
NTD20N06L-1G
MOSFET N-CH 60V 20A IPAK
NTD20N06LG
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Similar Products

Part Number NTD20N06L-1G NTD20P06L-1G NTD24N06L-1G NTD20N06-1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 15.5A (Ta) 24A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V 150mOhm @ 7.5A, 5V 45mOhm @ 10A, 5V 46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 26 nC @ 5 V 32 nC @ 5 V 30 nC @ 10 V
Vgs (Max) ±15V ±20V ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 1190 pF @ 25 V 1140 pF @ 25 V 1015 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.36W (Ta), 60W (Tj) 65W (Tc) 1.36W (Ta), 62.5W (Tj) 1.88W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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