Overview
The NTD20P06L-1G is a power MOSFET produced by onsemi, designed for high-performance applications. This P-Channel MOSFET is packaged in a DPAK (TO-252) case and is known for its robust electrical and thermal characteristics. It is AEC Q101 qualified, ensuring reliability in automotive and other demanding environments. The device is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage (Continuous) | VGS | -20 | V |
| Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) | VGSM | -30 | V |
| Drain Current (Steady State, TC = 25°C) | ID | -15.5 | A |
| Power Dissipation (Steady State, TC = 25°C) | PD | 65 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -50 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 304 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 2.3 | °C/W |
| Junction-to-Ambient Thermal Resistance (Note 1) | RθJA | 80 | °C/W |
| Junction-to-Ambient Thermal Resistance (Note 2) | RθJA | 110 | °C/W |
Key Features
- Withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching.
- AEC Q101 qualified for automotive applications.
- Pb-free and RoHS compliant.
- High drain current capability of up to -15.5 A.
- Low on-resistance (RDS(on)) of 0.130 Ω typical at VGS = -5 V, ID = -7.5 A.
- High thermal performance with a junction-to-case thermal resistance of 2.3 °C/W.
Applications
- Bridge circuits.
- Power supplies.
- Power motor controls.
- DC-DC conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTD20P06L-1G MOSFET?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous gate-to-source voltage rating for this MOSFET?
The continuous gate-to-source voltage (VGS) is -20 V.
- What is the maximum steady-state drain current for the NTD20P06L-1G?
The maximum steady-state drain current (ID) is -15.5 A at TC = 25°C.
- Is the NTD20P06L-1G Pb-free and RoHS compliant?
- What are the typical applications of the NTD20P06L-1G MOSFET?
The typical applications include bridge circuits, power supplies, power motor controls, and DC-DC conversion.
- What is the junction-to-case thermal resistance of the NTD20P06L-1G?
The junction-to-case thermal resistance (RθJC) is 2.3 °C/W.
- What is the maximum single pulse drain-to-source avalanche energy for this MOSFET?
The maximum single pulse drain-to-source avalanche energy (EAS) is 304 mJ.
- Is the NTD20P06L-1G AEC Q101 qualified?
- What is the typical on-resistance (RDS(on)) of the NTD20P06L-1G?
The typical on-resistance (RDS(on)) is 0.130 Ω at VGS = -5 V, ID = -7.5 A.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260 °C.
