NTD20P06L-001
  • Share:

onsemi NTD20P06L-001

Manufacturer No:
NTD20P06L-001
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 15.5A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD20P06L-001 is a single P-Channel power MOSFET produced by onsemi. This device is packaged in a DPAK (TO-252) case and is designed for high-performance applications requiring low on-resistance and fast switching times. The MOSFET is AEC Q101 qualified for the NTDV20P06L variant, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage (Continuous) VGS −20 V
Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) VGSM −30 V
Drain Current (Steady State, TC = 25°C) ID -15.5 A
Power Dissipation (Steady State, TC = 25°C) PD 65 W
Gate Threshold Voltage VGS(TH) -1.0 to -2.0 V
Drain-to-Source On Resistance RDS(on) 0.130 to 0.150 Ω
Total Gate Charge QG(TOT) 15 to 26 nC

Key Features

  • Withstands high energy in avalanche and commutation modes.
  • Low gate charge for fast switching.
  • AEC Q101 qualified for the NTDV20P06L variant, ensuring automotive-grade reliability.
  • Pb-free and RoHS compliant.

Applications

  • Bridge circuits.
  • Power supplies.
  • Power motor controls.
  • DC-DC conversion.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20P06L-001 MOSFET?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the continuous gate-to-source voltage rating?

    The continuous gate-to-source voltage (VGS) is -20 V.

  3. What is the maximum steady-state drain current?

    The maximum steady-state drain current (ID) is -15.5 A at TC = 25°C.

  4. What is the typical on-resistance of the MOSFET?

    The typical drain-to-source on-resistance (RDS(on)) is 0.130 to 0.150 Ω at VGS = -5.0 V and ID = -7.5 A.

  5. Is the NTD20P06L-001 MOSFET RoHS compliant?
  6. What are the common applications of the NTD20P06L-001 MOSFET?
  7. What is the total gate charge of the MOSFET?

    The total gate charge (QG(TOT)) is 15 to 26 nC.

  8. Is the NTDV20P06L variant AEC Q101 qualified?
  9. What is the maximum power dissipation of the MOSFET?

    The maximum power dissipation (PD) is 65 W at TC = 25°C.

  10. What is the gate threshold voltage range of the MOSFET?

    The gate threshold voltage (VGS(TH)) range is -1.0 to -2.0 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:150mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
485

Please send RFQ , we will respond immediately.

Same Series
NTD20P06LT4G
NTD20P06LT4G
MOSFET P-CH 60V 15.5A DPAK
NTD20P06L-001
NTD20P06L-001
MOSFET P-CH 60V 15.5A IPAK
NTD20P06L-1G
NTD20P06L-1G
MOSFET P-CH 60V 15.5A IPAK
NTDV20P06LT4G
NTDV20P06LT4G
MOSFET P-CH 60V 15.5A DPAK

Similar Products

Part Number NTD20P06L-001 NTD20N06L-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 150mOhm @ 7.5A, 5V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V 32 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 990 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP