Overview
The NTD20P06L-001 is a single P-Channel power MOSFET produced by onsemi. This device is packaged in a DPAK (TO-252) case and is designed for high-performance applications requiring low on-resistance and fast switching times. The MOSFET is AEC Q101 qualified for the NTDV20P06L variant, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | -60 | V |
Gate-to-Source Voltage (Continuous) | VGS | −20 | V |
Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) | VGSM | −30 | V |
Drain Current (Steady State, TC = 25°C) | ID | -15.5 | A |
Power Dissipation (Steady State, TC = 25°C) | PD | 65 | W |
Gate Threshold Voltage | VGS(TH) | -1.0 to -2.0 | V |
Drain-to-Source On Resistance | RDS(on) | 0.130 to 0.150 | Ω |
Total Gate Charge | QG(TOT) | 15 to 26 | nC |
Key Features
- Withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching.
- AEC Q101 qualified for the NTDV20P06L variant, ensuring automotive-grade reliability.
- Pb-free and RoHS compliant.
Applications
- Bridge circuits.
- Power supplies.
- Power motor controls.
- DC-DC conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTD20P06L-001 MOSFET?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous gate-to-source voltage rating?
The continuous gate-to-source voltage (VGS) is -20 V.
- What is the maximum steady-state drain current?
The maximum steady-state drain current (ID) is -15.5 A at TC = 25°C.
- What is the typical on-resistance of the MOSFET?
The typical drain-to-source on-resistance (RDS(on)) is 0.130 to 0.150 Ω at VGS = -5.0 V and ID = -7.5 A.
- Is the NTD20P06L-001 MOSFET RoHS compliant?
- What are the common applications of the NTD20P06L-001 MOSFET?
- What is the total gate charge of the MOSFET?
The total gate charge (QG(TOT)) is 15 to 26 nC.
- Is the NTDV20P06L variant AEC Q101 qualified?
- What is the maximum power dissipation of the MOSFET?
The maximum power dissipation (PD) is 65 W at TC = 25°C.
- What is the gate threshold voltage range of the MOSFET?
The gate threshold voltage (VGS(TH)) range is -1.0 to -2.0 V.