NTD20P06L-001
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onsemi NTD20P06L-001

Manufacturer No:
NTD20P06L-001
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 15.5A IPAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTD20P06L-001 is a single P-Channel power MOSFET produced by onsemi. This device is packaged in a DPAK (TO-252) case and is designed for high-performance applications requiring low on-resistance and fast switching times. The MOSFET is AEC Q101 qualified for the NTDV20P06L variant, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage (Continuous) VGS −20 V
Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) VGSM −30 V
Drain Current (Steady State, TC = 25°C) ID -15.5 A
Power Dissipation (Steady State, TC = 25°C) PD 65 W
Gate Threshold Voltage VGS(TH) -1.0 to -2.0 V
Drain-to-Source On Resistance RDS(on) 0.130 to 0.150 Ω
Total Gate Charge QG(TOT) 15 to 26 nC

Key Features

  • Withstands high energy in avalanche and commutation modes.
  • Low gate charge for fast switching.
  • AEC Q101 qualified for the NTDV20P06L variant, ensuring automotive-grade reliability.
  • Pb-free and RoHS compliant.

Applications

  • Bridge circuits.
  • Power supplies.
  • Power motor controls.
  • DC-DC conversion.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20P06L-001 MOSFET?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the continuous gate-to-source voltage rating?

    The continuous gate-to-source voltage (VGS) is -20 V.

  3. What is the maximum steady-state drain current?

    The maximum steady-state drain current (ID) is -15.5 A at TC = 25°C.

  4. What is the typical on-resistance of the MOSFET?

    The typical drain-to-source on-resistance (RDS(on)) is 0.130 to 0.150 Ω at VGS = -5.0 V and ID = -7.5 A.

  5. Is the NTD20P06L-001 MOSFET RoHS compliant?
  6. What are the common applications of the NTD20P06L-001 MOSFET?
  7. What is the total gate charge of the MOSFET?

    The total gate charge (QG(TOT)) is 15 to 26 nC.

  8. Is the NTDV20P06L variant AEC Q101 qualified?
  9. What is the maximum power dissipation of the MOSFET?

    The maximum power dissipation (PD) is 65 W at TC = 25°C.

  10. What is the gate threshold voltage range of the MOSFET?

    The gate threshold voltage (VGS(TH)) range is -1.0 to -2.0 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:150mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD20P06L-001 NTD20N06L-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 150mOhm @ 7.5A, 5V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V 32 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 990 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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