NTD20P06L-001
  • Share:

onsemi NTD20P06L-001

Manufacturer No:
NTD20P06L-001
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 15.5A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD20P06L-001 is a single P-Channel power MOSFET produced by onsemi. This device is packaged in a DPAK (TO-252) case and is designed for high-performance applications requiring low on-resistance and fast switching times. The MOSFET is AEC Q101 qualified for the NTDV20P06L variant, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage (Continuous) VGS −20 V
Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) VGSM −30 V
Drain Current (Steady State, TC = 25°C) ID -15.5 A
Power Dissipation (Steady State, TC = 25°C) PD 65 W
Gate Threshold Voltage VGS(TH) -1.0 to -2.0 V
Drain-to-Source On Resistance RDS(on) 0.130 to 0.150 Ω
Total Gate Charge QG(TOT) 15 to 26 nC

Key Features

  • Withstands high energy in avalanche and commutation modes.
  • Low gate charge for fast switching.
  • AEC Q101 qualified for the NTDV20P06L variant, ensuring automotive-grade reliability.
  • Pb-free and RoHS compliant.

Applications

  • Bridge circuits.
  • Power supplies.
  • Power motor controls.
  • DC-DC conversion.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20P06L-001 MOSFET?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the continuous gate-to-source voltage rating?

    The continuous gate-to-source voltage (VGS) is -20 V.

  3. What is the maximum steady-state drain current?

    The maximum steady-state drain current (ID) is -15.5 A at TC = 25°C.

  4. What is the typical on-resistance of the MOSFET?

    The typical drain-to-source on-resistance (RDS(on)) is 0.130 to 0.150 Ω at VGS = -5.0 V and ID = -7.5 A.

  5. Is the NTD20P06L-001 MOSFET RoHS compliant?
  6. What are the common applications of the NTD20P06L-001 MOSFET?
  7. What is the total gate charge of the MOSFET?

    The total gate charge (QG(TOT)) is 15 to 26 nC.

  8. Is the NTDV20P06L variant AEC Q101 qualified?
  9. What is the maximum power dissipation of the MOSFET?

    The maximum power dissipation (PD) is 65 W at TC = 25°C.

  10. What is the gate threshold voltage range of the MOSFET?

    The gate threshold voltage (VGS(TH)) range is -1.0 to -2.0 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:150mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
485

Please send RFQ , we will respond immediately.

Same Series
NTD20P06LT4G
NTD20P06LT4G
MOSFET P-CH 60V 15.5A DPAK
NTD20P06L-001
NTD20P06L-001
MOSFET P-CH 60V 15.5A IPAK
NTD20P06LG
NTD20P06LG
MOSFET P-CH 60V 15.5A DPAK
NTDV20P06LT4G
NTDV20P06LT4G
MOSFET P-CH 60V 15.5A DPAK

Similar Products

Part Number NTD20P06L-001 NTD20N06L-001
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 150mOhm @ 7.5A, 5V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V 32 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 990 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5