Overview
The NTD20N06L-001 is a power MOSFET from onsemi, designed for high-speed switching applications. This N-Channel, logic-level MOSFET is part of the NTD20N06L series and is available in DPAK and IPAK packages. It is optimized for use in power supplies, converters, power motor controls, and bridge circuits. The device is AEC Q101 qualified, making it suitable for automotive and other applications requiring stringent reliability standards. Additionally, it is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage (Continuous) | VGS | ±15 | Vdc |
| Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms) | VGS | ±20 | Vdc |
| Drain Current (Continuous at TA = 25°C) | ID | 20 | A |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.6 | Vdc |
| Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 10 A) | RDS(on) | 39 - 48 | mΩ |
| Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) | Ciss | 707 - 990 | pF |
| Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) | Coss | 224 - 320 | pF |
| Reverse Recovery Time (IS = 20 A, VGS = 0 Vdc, dIS/dt = 100 A/μs) | trr | 42 | ns |
| Maximum Junction Temperature | TJ | 175 | °C |
Key Features
- AEC Q101 Qualified for automotive and other stringent applications
- Pb-free and RoHS compliant
- Low RDS(on) for reduced power losses
- Low VDS(on) for efficient switching
- Low total gate charge and low diode reverse recovery time
- High speed switching capabilities
- Logic-level gate drive for ease of use with microcontrollers and other logic-level devices
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTD20N06L-001 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the maximum continuous drain current of the NTD20N06L-001?
The maximum continuous drain current (ID) is 20 A at TA = 25°C.
- What are the typical applications of the NTD20N06L-001 MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- Is the NTD20N06L-001 MOSFET AEC Q101 qualified?
- What is the maximum gate-to-source voltage of the NTD20N06L-001?
The maximum continuous gate-to-source voltage (VGS) is ±15 Vdc, and ±20 Vdc for non-repetitive pulses (tp ≤ 10 ms).
- What is the static drain-to-source on-resistance of the NTD20N06L-001?
The static drain-to-source on-resistance (RDS(on)) is 39 - 48 mΩ at VGS = 5.0 Vdc and ID = 10 A.
- What is the input capacitance of the NTD20N06L-001?
The input capacitance (Ciss) is 707 - 990 pF at VDS = 25 Vdc, VGS = 0 Vdc, and f = 1.0 MHz.
- What is the reverse recovery time of the NTD20N06L-001?
The reverse recovery time (trr) is 42 ns at IS = 20 A, VGS = 0 Vdc, and dIS/dt = 100 A/μs.
- Is the NTD20N06L-001 Pb-free and RoHS compliant?
- What is the maximum junction temperature of the NTD20N06L-001?
The maximum junction temperature (TJ) is 175°C.
