NTD20N06LG
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onsemi NTD20N06LG

Manufacturer No:
NTD20N06LG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 20A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTD20N06LG is a high-performance N-channel power MOSFET designed and manufactured by ON Semiconductor. This device is optimized for low voltage, high-speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. With its robust specifications and compliance with industry standards, the NTD20N06LG ensures reliable and efficient operation in a variety of high-power electronic circuits.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage - Continuous VGS ±15 Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) VGS ±20 Vdc
Drain Current - Continuous @ TA = 25°C ID 20 A
Maximum Junction Temperature TJ 175 °C
Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 10 A) RDS(on) 39 - 48
Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) VGS(th) 1.0 - 2.0 Vdc
Total Gate Charge (VGS = 5.0 Vdc, ID = 10 A) Qg 16.6 nC
Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss 224 pF

Key Features

  • AEC Q101 Qualified: The NTDV20N06L version is qualified to the AEC Q101 standard, ensuring reliability in automotive applications.
  • Pb-Free and RoHS Compliant: The device is lead-free and complies with RoHS standards, making it environmentally friendly.
  • Low On-Resistance: With a low on-resistance of 39-48 mΩ at VGS = 5.0 Vdc and ID = 10 A, it minimizes power loss and heat dissipation.
  • High Speed Switching: Designed for high-speed switching applications, making it suitable for power supplies, converters, and motor controls.
  • Low Input Capacitance: Features low input capacitance, which is beneficial for high-frequency switching applications.
  • High Current Capability: Supports a continuous drain current of 20 A, making it suitable for high-power applications.

Applications

  • Power Supplies: Ideal for use in power supply circuits due to its high current and low on-resistance characteristics.
  • Converters: Suitable for DC-DC converters and other power conversion applications.
  • Power Motor Controls: Used in motor control circuits where high current and efficient switching are required.
  • Bridge Circuits: Applicable in bridge circuits and other high-power switching applications.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06LG MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current rating of the NTD20N06LG?

    The continuous drain current (ID) is 20 A at TA = 25°C.

  3. What is the gate threshold voltage range of the NTD20N06LG?

    The gate threshold voltage (VGS(th)) ranges from 1.0 to 2.0 Vdc.

  4. Is the NTD20N06LG RoHS compliant?
  5. What is the typical on-resistance of the NTD20N06LG?

    The static drain-to-source on-resistance (RDS(on)) is typically between 39 and 48 mΩ at VGS = 5.0 Vdc and ID = 10 A.

  6. What are the typical applications of the NTD20N06LG?

    The NTD20N06LG is typically used in power supplies, converters, power motor controls, and bridge circuits.

  7. What is the maximum junction temperature of the NTD20N06LG?

    The maximum junction temperature (TJ) is 175°C.

  8. What package types are available for the NTD20N06LG?

    The NTD20N06LG is available in DPAK and IPAK packages.

  9. Is the NTD20N06LG suitable for automotive applications?
  10. What is the output capacitance of the NTD20N06LG?

    The output capacitance (Coss) is 224 pF at VDS = 25 Vdc, VGS = 0 Vdc, and f = 1.0 MHz.[

  11. What is the total gate charge of the NTD20N06LG?

    The total gate charge (Qg) is 16.6 nC at VGS = 5.0 Vdc and ID = 10 A.[

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD20N06L-1G
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Similar Products

Part Number NTD20N06LG NTD20P06LG NTD24N06LG NTD20N06G NTD20N06L
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 15.5A (Ta) 24A (Ta) 20A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 10V 5V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V 150mOhm @ 7.5A, 5V 45mOhm @ 10A, 5V 46mOhm @ 10A, 10V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 26 nC @ 5 V 32 nC @ 5 V 30 nC @ 10 V -
Vgs (Max) ±15V ±20V ±15V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 1190 pF @ 25 V 1140 pF @ 25 V 1015 pF @ 25 V 990 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 1.36W (Ta), 60W (Tj) 65W (Tc) 1.36W (Ta), 62.5W (Tj) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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