NTD20N06G
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onsemi NTD20N06G

Manufacturer No:
NTD20N06G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 20A DPAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTD20N06G is a power MOSFET from onsemi, designed for high-performance applications requiring low voltage and high-speed switching. This N-Channel MOSFET is packaged in a DPAK (TO-252) case and is optimized for use in power supplies, converters, power motor controls, and bridge circuits. It is known for its low on-resistance (RDS(on)), low input and output capacitances, and low total gate charge, making it suitable for high-efficiency and high-reliability applications.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain Current - Continuous @ TA = 25°C ID 20 A
Drain Current - Continuous @ TA = 100°C ID 10 A
Single Pulse Drain Current IDM 60 A
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) VGS ±30 Vdc
Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 10 A) RDS(on) 37.5 mΩ
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Low RDS(on) of 37.5 mΩ (typical) for high efficiency.
  • Low input and output capacitances for fast switching.
  • Low total gate charge for reduced switching losses.
  • Low and tight VSD for improved reliability.
  • Low diode reverse recovery time and stored charge for better performance in high-frequency applications.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06G?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 20 A at 25°C and 10 A at 100°C.

  3. What is the typical on-resistance (RDS(on)) of the NTD20N06G?

    The typical on-resistance is 37.5 mΩ.

  4. What are the operating and storage temperature ranges for the NTD20N06G?

    The operating and storage temperature range is -55 to 175 °C.

  5. Is the NTD20N06G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  6. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C.

  7. What are some typical applications of the NTD20N06G?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  8. Is the NTD20N06G Pb-free and RoHS compliant?

    Yes, the NTD20N06G is Pb-free and RoHS compliant.

  9. What is the single pulse drain-to-source avalanche energy rating?

    The single pulse drain-to-source avalanche energy (EAS) is 170 mJ.

  10. What are the key features that make the NTD20N06G efficient for high-speed switching applications?

    The key features include low RDS(on), low input and output capacitances, low total gate charge, and low diode reverse recovery time and stored charge.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1015 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.88W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD20N06G NTD20N06L NTD20N06LG NTD24N06G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta) 20A (Ta) 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V 5V 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 10A, 10V 48mOhm @ 10A, 5V 48mOhm @ 10A, 5V 42mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V - 32 nC @ 5 V 48 nC @ 10 V
Vgs (Max) ±20V - ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1015 pF @ 25 V 990 pF @ 25 V 990 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj) 1.36W (Ta), 62.5W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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