Overview
The NTD20N06-1G is a power MOSFET produced by onsemi, designed for high-performance applications requiring low voltage and high-speed switching. This N-Channel MOSFET is packaged in a DPAK (TO-252) case and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp < 10 ms) | VGS | ±30 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 20 | A |
| Drain Current - Continuous @ TA = 100°C | ID | 10 | A |
| Single Pulse Drain Current (tp < 10 μs) | IDM | 60 | A |
| Total Power Dissipation @ TA = 25°C | PD | 60 | W |
| Maximum Junction Temperature | TJ | 175 | °C |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 10 A) | RDS(on) | 37.5 mΩ | mΩ |
| Total Gate Charge (VDS = 48 Vdc, ID = 20 A, VGS = 10 Vdc) | QT | 21.2 nC | nC |
| Rise Time (VDD = 30 Vdc, ID = 20 A, VGS = 10 Vdc, RG = 9.1 Ω) | tr | 60.5 ns | ns |
| Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) | Coss | 213 pF | pF |
Key Features
- Lower RDS(on) for reduced power losses
- Lower VDS(on) for improved efficiency
- Lower Capacitances for faster switching times
- Lower Total Gate Charge for enhanced switching performance
- Lower and Tighter VSD for better diode characteristics
- Lower Diode Reverse Recovery Time and Stored Charge for reduced switching losses
- AEC-Q101 Qualified and PPAP Capable for automotive and other critical applications
- Pb-free and RoHS compliant for environmental sustainability
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTD20N06-1G MOSFET?
The maximum drain-to-source voltage is 60 Vdc. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 20 A. - What is the maximum junction temperature for this MOSFET?
The maximum junction temperature is 175°C. - Is the NTD20N06-1G MOSFET AEC-Q101 qualified?
Yes, the NTD20N06-1G MOSFET is AEC-Q101 qualified. - What is the typical on-state resistance of the NTD20N06-1G?
The typical on-state resistance (RDS(on)) is 37.5 mΩ. - What are the typical applications of the NTD20N06-1G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits. - Is the NTD20N06-1G Pb-free and RoHS compliant?
Yes, the NTD20N06-1G is Pb-free and RoHS compliant. - What is the package type of the NTD20N06-1G MOSFET?
The package type is DPAK (TO-252). - What is the total gate charge of the NTD20N06-1G MOSFET?
The total gate charge (QT) is 21.2 nC. - What is the rise time of the NTD20N06-1G MOSFET?
The rise time (tr) is 60.5 ns.
