Overview
The NTD20N06T4G is a power MOSFET produced by onsemi, designed for high-performance applications requiring low voltage and high-speed switching. This N-Channel MOSFET is packaged in a DPAK (TO-252) case and is suitable for a variety of power management and control applications. Although the device is not recommended for new designs, it remains a robust option for existing systems and legacy projects. The MOSFET is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc | ||
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc | ||
| Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) | VGS | ±30 | Vdc | ||
| Drain Current - Continuous @ TA = 25°C | ID | 20 | A | ||
| Drain Current - Continuous @ TA = 100°C | ID | 10 | A | ||
| Single Pulse Drain Current (tp ≤ 10 μs) | IDM | 60 | A | ||
| Total Power Dissipation @ TA = 25°C | PD | 60 | W | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 10 A) | RDS(on) | 37.5 | 46 | mΩ | |
| Gate Threshold Voltage (VDS = VGS, ID = 250 μA) | VGS(th) | 2.0 | 4.0 | Vdc | |
| Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) | Ciss | 725 | 1015 | pF | |
| Turn-On Delay Time (VDD = 30 Vdc, ID = 20 A, VGS = 10 Vdc, RG = 9.1 Ω) | td(on) | 9.5 | 20 | ns |
Key Features
- Lower RDS(on) for reduced power losses
- Lower VDS(on) for improved efficiency
- Lower Capacitances for faster switching times
- Lower Total Gate Charge for better switching performance
- Lower and Tighter VSD for enhanced reliability
- Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for reduced switching losses
- AEC-Q101 Qualified and PPAP Capable for automotive and other critical applications
- Pb-free and RoHS compliant for environmental sustainability
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTD20N06T4G?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 20 A.
- What is the typical on-resistance of the MOSFET?
The typical static drain-to-source on-resistance (RDS(on)) is 37.5 mΩ at VGS = 10 Vdc and ID = 10 A.
- Is the NTD20N06T4G suitable for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other critical applications.
- What is the operating temperature range of the NTD20N06T4G?
The operating and storage temperature range is -55°C to 175°C.
- What is the maximum total power dissipation at 25°C?
The maximum total power dissipation (PD) at 25°C is 60 W.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 9.5 ns, and the typical turn-off delay time (td(off)) is 27.1 ns.
- Is the NTD20N06T4G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are some common applications for the NTD20N06T4G?
Common applications include power supplies, converters, power motor controls, and bridge circuits.
- Why is the NTD20N06T4G not recommended for new designs?
The device is not recommended for new designs, but it can still be used in existing systems and legacy projects.
