NTD20N06T4
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onsemi NTD20N06T4

Manufacturer No:
NTD20N06T4
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 20A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD20N06T4G is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is packaged in a DPAK (Pb-Free) case and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other demanding applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain Current - Continuous @ TA = 25°CID20A
Drain Current - Continuous @ TA = 100°CID10A
Single Pulse Drain CurrentIDM60A
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms)VGS±30Vdc
Total Power Dissipation @ TA = 25°CPD60W
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Static Drain-to-Source On-ResistanceRDS(on)37.5mΩ
Static Drain-to-Source On-VoltageVDS(on)0.78Vdc
Maximum Lead Temperature for Soldering PurposesTL260°C

Key Features

  • Lower RDS(on) for reduced power losses.
  • Lower VDS(on) for improved switching performance.
  • Lower Capacitances for faster switching times.
  • Lower Total Gate Charge for efficient gate drive.
  • Lower and tighter VSD for better diode performance.
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-Free and RoHS compliant.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06T4G?
    The maximum drain-to-source voltage is 60 Vdc.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 20 A at 25°C and 10 A at 100°C.
  3. What is the single pulse drain current rating?
    The single pulse drain current rating is 60 A.
  4. What are the gate-to-source voltage limits?
    The continuous gate-to-source voltage limit is ±20 Vdc, and the non-repetitive limit (tp ≤ 10 ms) is ±30 Vdc.
  5. What is the total power dissipation at 25°C?
    The total power dissipation at 25°C is 60 W.
  6. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to 175 °C.
  7. What is the typical static drain-to-source on-resistance?
    The typical static drain-to-source on-resistance is 37.5 mΩ.
  8. Is the NTD20N06T4G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  9. Is the NTD20N06T4G Pb-Free and RoHS compliant?
    Yes, it is Pb-Free and RoHS compliant.
  10. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1015 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.88W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD20N06T4G
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NTD20N06-001
MOSFET N-CH 60V 20A IPAK
NTD20N06-1G
NTD20N06-1G
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NTD20N06G
NTD20N06G
MOSFET N-CH 60V 20A DPAK

Similar Products

Part Number NTD20N06T4 NTD20N06T4G NTD20N06LT4
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V
Rds On (Max) @ Id, Vgs 46mOhm @ 10A, 10V 46mOhm @ 10A, 10V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V 32 nC @ 5 V
Vgs (Max) ±20V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1015 pF @ 25 V 1015 pF @ 25 V 990 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.88W (Ta), 60W (Tj) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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