Overview
The NTD20N06-001 is a high-performance, N-Channel power MOSFET designed and manufactured by onsemi. This device is optimized for low voltage, high speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a DPAK package and is known for its robust electrical characteristics and reliability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 60 | Vdc |
Drain-to-Gate Voltage | VDGR | 60 | Vdc |
Gate-to-Source Voltage | VGS | ±20 | Vdc |
Continuous Drain Current | ID | 20 | A |
Single Pulse Drain Current | IDM | 60 | A |
Total Power Dissipation | PD | 60 | W |
Junction Temperature | TJ | -55 to 175 | °C |
Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | Vdc |
Static Drain-to-Source On-Resistance | RDS(on) | 37.5 - 46 | mΩ |
Total Gate Charge | QT | 21.2 | nC |
Rise Time | tr | 60.5 | ns |
Output Capacitance | Coss | 213 | pF |
Key Features
- Lower RDS(on) for reduced power losses
- Lower VDS(on) for improved efficiency
- Lower Capacitances for faster switching times
- Lower Total Gate Charge for easier gate drive
- Lower and Tighter VSD for better diode performance
- Lower Diode Reverse Recovery Time and Stored Charge for reduced switching losses
- AEC Q101 Qualified for automotive and other demanding applications (NTDV20N06)
- Pb-Free and RoHS Compliant
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTD20N06-001 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the maximum continuous drain current of the NTD20N06-001?
The maximum continuous drain current (ID) is 20 A.
- What is the typical on-state resistance (RDS(on)) of the NTD20N06-001?
The typical on-state resistance (RDS(on)) is 37.5 - 46 mΩ.
- What are the typical applications of the NTD20N06-001 MOSFET?
The typical applications include power supplies, converters, power motor controls, and bridge circuits).
- Is the NTD20N06-001 MOSFET RoHS compliant?
- What is the maximum junction temperature of the NTD20N06-001?
The maximum junction temperature (TJ) is 175°C).
- What is the total gate charge (QT) of the NTD20N06-001?
The total gate charge (QT) is 21.2 nC).
- What is the rise time (tr) of the NTD20N06-001 MOSFET?
The rise time (tr) is 60.5 ns).
- Is the NTD20N06-001 suitable for automotive applications?
The NTDV20N06 variant is AEC Q101 Qualified, making it suitable for automotive and other demanding applications).
- What package type does the NTD20N06-001 come in?
The NTD20N06-001 comes in a DPAK package).