NTD20N06-001
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onsemi NTD20N06-001

Manufacturer No:
NTD20N06-001
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 20A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD20N06-001 is a high-performance, N-Channel power MOSFET designed and manufactured by onsemi. This device is optimized for low voltage, high speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a DPAK package and is known for its robust electrical characteristics and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage VGS ±20 Vdc
Continuous Drain Current ID 20 A
Single Pulse Drain Current IDM 60 A
Total Power Dissipation PD 60 W
Junction Temperature TJ -55 to 175 °C
Gate Threshold Voltage VGS(th) 2.0 - 4.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) 37.5 - 46
Total Gate Charge QT 21.2 nC
Rise Time tr 60.5 ns
Output Capacitance Coss 213 pF

Key Features

  • Lower RDS(on) for reduced power losses
  • Lower VDS(on) for improved efficiency
  • Lower Capacitances for faster switching times
  • Lower Total Gate Charge for easier gate drive
  • Lower and Tighter VSD for better diode performance
  • Lower Diode Reverse Recovery Time and Stored Charge for reduced switching losses
  • AEC Q101 Qualified for automotive and other demanding applications (NTDV20N06)
  • Pb-Free and RoHS Compliant

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06-001 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the maximum continuous drain current of the NTD20N06-001?

    The maximum continuous drain current (ID) is 20 A.

  3. What is the typical on-state resistance (RDS(on)) of the NTD20N06-001?

    The typical on-state resistance (RDS(on)) is 37.5 - 46 mΩ.

  4. What are the typical applications of the NTD20N06-001 MOSFET?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits).

  5. Is the NTD20N06-001 MOSFET RoHS compliant?
  6. What is the maximum junction temperature of the NTD20N06-001?

    The maximum junction temperature (TJ) is 175°C).

  7. What is the total gate charge (QT) of the NTD20N06-001?

    The total gate charge (QT) is 21.2 nC).

  8. What is the rise time (tr) of the NTD20N06-001 MOSFET?

    The rise time (tr) is 60.5 ns).

  9. Is the NTD20N06-001 suitable for automotive applications?

    The NTDV20N06 variant is AEC Q101 Qualified, making it suitable for automotive and other demanding applications).

  10. What package type does the NTD20N06-001 come in?

    The NTD20N06-001 comes in a DPAK package).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1015 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.88W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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In Stock

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Same Series
NTD20N06T4G
NTD20N06T4G
MOSFET N-CH 60V 20A DPAK
NTD20N06T4
NTD20N06T4
MOSFET N-CH 60V 20A DPAK
NTD20N06-001
NTD20N06-001
MOSFET N-CH 60V 20A IPAK
NTD20N06-1G
NTD20N06-1G
MOSFET N-CH 60V 20A IPAK

Similar Products

Part Number NTD20N06-001 NTD24N06-001 NTD20N06L-001
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 24A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V
Rds On (Max) @ Id, Vgs 46mOhm @ 10A, 10V 42mOhm @ 10A, 10V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 48 nC @ 10 V 32 nC @ 5 V
Vgs (Max) ±20V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1015 pF @ 25 V 1200 pF @ 25 V 990 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 62.5W (Tj) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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