NTD20N06LT4G
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onsemi NTD20N06LT4G

Manufacturer No:
NTD20N06LT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 20A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD20N06LT4G is a high-performance N-channel MOSFET manufactured by ON Semiconductor. This device is designed for low voltage, high-speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a logic-level gate drive, which simplifies the interface with microcontrollers and other logic circuits. It is available in the DPAK (TO-252) package and is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage (Continuous) VGS ±15 Vdc
Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms) VGS ±20 Vdc
Drain Current (Continuous at TA = 25°C) ID 20 A
Drain Current (Continuous at TA = 100°C) ID 10 A
Static Drain-to-Source On-Resistance (VGS = 5.0 V, ID = 10 A) RDS(on) 39 - 48
Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 1.0 - 2.0 Vdc
Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Ciss 707 - 990 pF
Output Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Coss 224 - 320 pF

Key Features

  • AEC Q101 Qualified for the NTDV20N06L variant, ensuring reliability in automotive applications.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • Logic-level gate drive for easy interface with microcontrollers and other logic circuits.
  • High-speed switching capabilities, suitable for power supplies, converters, and motor controls.
  • Low on-resistance (RDS(on)) of 39 - 48 mΩ at VGS = 5.0 V and ID = 10 A.
  • High drain current rating of 20 A at TA = 25°C.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06LT4G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current rating at TA = 25°C?

    The continuous drain current rating at TA = 25°C is 20 A.

  3. Is the NTD20N06LT4G Pb-free and RoHS compliant?
  4. What is the typical on-resistance of the NTD20N06LT4G?

    The typical on-resistance (RDS(on)) is 39 - 48 mΩ at VGS = 5.0 V and ID = 10 A.

  5. What are the typical applications of the NTD20N06LT4G MOSFET?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  6. What is the gate threshold voltage range of the NTD20N06LT4G?

    The gate threshold voltage (VGS(th)) range is 1.0 - 2.0 Vdc.

  7. What is the input capacitance of the NTD20N06LT4G?

    The input capacitance (Ciss) is 707 - 990 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz.

  8. Is the NTD20N06LT4G AEC Q101 Qualified?
  9. What package types are available for the NTD20N06LT4G?

    The NTD20N06LT4G is available in the DPAK (TO-252) package.

  10. What is the reverse recovery time of the NTD20N06LT4G?

    The reverse recovery time (trr) is 42 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD20N06L-1G
NTD20N06L-1G
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NTD20N06LG
NTD20N06LG
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Similar Products

Part Number NTD20N06LT4G NTD20P06LT4G NTD24N06LT4G NTD20N06T4G NTD20N06LT4
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type N-Channel P-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 15.5A (Ta) 24A (Ta) 20A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 10V 5V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V 150mOhm @ 7.5A, 5V 45mOhm @ 10A, 5V 46mOhm @ 10A, 10V 48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 26 nC @ 5 V 32 nC @ 5 V 30 nC @ 10 V 32 nC @ 5 V
Vgs (Max) ±15V ±20V ±15V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 1190 pF @ 25 V 1140 pF @ 25 V 1015 pF @ 25 V 990 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 1.36W (Ta), 60W (Tj) 65W (Tc) 1.36W (Ta), 62.5W (Tj) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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