Overview
The NTD24N06LT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for high-current and high-voltage applications, making it suitable for a variety of power management and switching circuits. The MOSFET features a logic-level gate drive, which allows for easy control from standard logic circuits. It is packaged in a DPAK-3 (TO-252-3) case, which is lead-free and RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (Vds) | 60 | V |
| Continuous Drain Current (Id) | 24 | A |
| Gate-Source Threshold Voltage (Vgs(th)) | 1-2 | V |
| On-Resistance (Rds(on)) | 0.045 (Typical at Vgs = 10V) | Ω |
| Package Type | DPAK-3 (TO-252-3) | |
| Number of Channels | 1 Channel | |
| Transistor Polarity | N-Channel |
Key Features
- High Current Capability: The NTD24N06LT4G can handle continuous drain currents up to 24 A, making it suitable for high-power applications.
- High Voltage Rating: With a drain-source breakdown voltage of 60 V, this MOSFET can operate in a wide range of voltage conditions.
- Logic-Level Gate Drive: The device can be driven by standard logic circuits, simplifying the control interface.
- Low On-Resistance: The typical on-resistance of 0.045 Ω at Vgs = 10V minimizes power losses during operation.
- Lead-Free and RoHS Compliant: Packaged in a DPAK-3 case, this MOSFET meets environmental standards.
Applications
- Power Management: Suitable for power supplies, DC-DC converters, and other power management circuits.
- Motor Control: Can be used in motor drive circuits due to its high current and voltage handling capabilities.
- Switching Circuits: Ideal for high-frequency switching applications, including inductive loads with proper snubbing.
- Automotive Systems: Applicable in automotive systems requiring high reliability and performance.
Q & A
- What is the maximum continuous drain current of the NTD24N06LT4G?
The maximum continuous drain current is 24 A.
- What is the drain-source breakdown voltage of this MOSFET?
The drain-source breakdown voltage is 60 V.
- What type of package does the NTD24N06LT4G come in?
The device is packaged in a DPAK-3 (TO-252-3) case.
- Is the NTD24N06LT4G lead-free and RoHS compliant?
Yes, it is lead-free and RoHS compliant.
- What is the typical on-resistance of the NTD24N06LT4G?
The typical on-resistance is 0.045 Ω at Vgs = 10V.
- Can the NTD24N06LT4G be used in high-frequency switching applications?
Yes, it is suitable for high-frequency switching applications, including inductive loads with proper snubbing.
- What is the gate-source threshold voltage range of this MOSFET?
The gate-source threshold voltage range is 1-2 V.
- Is the NTD24N06LT4G suitable for automotive systems?
Yes, it is applicable in automotive systems requiring high reliability and performance.
- How does the NTD24N06LT4G handle inductive loads?
The device can safely operate into an inductive load, but snubbing is recommended to reduce switching losses.
- What are the key considerations for ensuring reliable operation of the NTD24N06LT4G?
Ensure that the maximum ratings are not exceeded, and follow the safe operating area guidelines. Also, consider the thermal and parasitic circuit elements when designing the circuit.
