NTD24N06T4G
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onsemi NTD24N06T4G

Manufacturer No:
NTD24N06T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 24A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD24N06T4G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel, logic-level MOSFET is packaged in a DPAK (TO-252) package and is known for its robust electrical characteristics and reliability. Although the component is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)60 V
Continuous Drain Current (Id)27 A
Drain-Source Resistance (Rds On)42 mOhms
Gate-Source Voltage (Vgs)-20 to 10 V
Package TypeDPAK (TO-252)

Key Features

  • High drain current capability of 27 A, making it suitable for high-power applications.
  • Low drain-source resistance (Rds On) of 42 mOhms, which minimizes power losses.
  • Logic-level gate drive, allowing for easy control from standard logic circuits.
  • Robust safe operating area (SOA) and avalanche energy capability, ensuring reliable operation in demanding environments.
  • RoHS compliant, meeting environmental standards.

Applications

The NTD24N06T4G MOSFET is designed for use in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching circuits with inductive loads.
  • General-purpose power switching.

Q & A

  1. What is the drain-source breakdown voltage of the NTD24N06T4G?
    The drain-source breakdown voltage (Vds) is 60 V.
  2. What is the continuous drain current rating of the NTD24N06T4G?
    The continuous drain current (Id) is 27 A.
  3. What is the typical drain-source resistance (Rds On) of the NTD24N06T4G?
    The typical drain-source resistance (Rds On) is 42 mOhms.
  4. What type of package does the NTD24N06T4G come in?
    The NTD24N06T4G is packaged in a DPAK (TO-252) package.
  5. Is the NTD24N06T4G RoHS compliant?
    Yes, the NTD24N06T4G is RoHS compliant.
  6. What is the status of the NTD24N06T4G in terms of production?
    The NTD24N06T4G is currently listed as obsolete and no longer manufactured.
  7. What are some typical applications for the NTD24N06T4G?
    Typical applications include power supplies, DC-DC converters, motor control, and general-purpose power switching.
  8. How does the NTD24N06T4G handle inductive loads?
    The NTD24N06T4G can safely operate into inductive loads, but snubbing is recommended to reduce switching losses.
  9. What are the key considerations for safe operating area (SOA) of the NTD24N06T4G?
    The SOA is defined by the maximum simultaneous drain-to-source voltage and drain current, with considerations for peak junction temperature and transition times.
  10. Can the NTD24N06T4G be used in life support systems or medical devices?
    No, onsemi products, including the NTD24N06T4G, are not designed or intended for use in life support systems or medical devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:42mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 62.5W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD24N06-001
NTD24N06-001
MOSFET N-CH 60V 24A IPAK
NTD24N06-1G
NTD24N06-1G
MOSFET N-CH 60V 24A IPAK
NTD24N06G
NTD24N06G
MOSFET N-CH 60V 24A DPAK

Similar Products

Part Number NTD24N06T4G NTD20N06T4G NTD24N06LT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta) 20A (Ta) 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V
Rds On (Max) @ Id, Vgs 42mOhm @ 10A, 10V 46mOhm @ 10A, 10V 45mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 30 nC @ 10 V 32 nC @ 5 V
Vgs (Max) ±20V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 1015 pF @ 25 V 1140 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.36W (Ta), 62.5W (Tj) 1.88W (Ta), 60W (Tj) 1.36W (Ta), 62.5W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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