Overview
The NTD20P06LT4G is a P-Channel Power MOSFET produced by onsemi, designed for low to medium voltage applications. This device is part of onsemi's TrenchFET® family, known for its high performance and reliability. The MOSFET is packaged in a DPAK (TO-252) case, which is compact and suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | -60 V |
| VGS (Gate-Source Voltage) | ±20 V |
| ID (Continuous Drain Current) | -20 A |
| RDS(ON) (On-Resistance) | 35 mΩ (Typical at VGS = -10 V) |
| PD (Power Dissipation) | 2.5 W |
| TJ (Junction Temperature) | -55 to 150°C |
| Package | DPAK (TO-252) |
Key Features
- TrenchFET® technology for low on-resistance and high efficiency
- 100% UIS (Unclamped Inductive Switching) tested for reliability
- Low RDS(ON) of 35 mΩ (Typical at VGS = -10 V)
- High continuous drain current of -20 A
- Compact DPAK (TO-252) package for space-saving designs
Applications
The NTD20P06LT4G is suitable for a variety of applications including power management, DC-DC converters, motor control, and general-purpose switching. Its high performance and reliability make it an excellent choice for automotive, industrial, and consumer electronics.
Q & A
- What is the drain-source voltage rating of the NTD20P06LT4G?
The drain-source voltage rating is -60 V. - What is the typical on-resistance of the NTD20P06LT4G?
The typical on-resistance is 35 mΩ at VGS = -10 V. - What is the continuous drain current of the NTD20P06LT4G?
The continuous drain current is -20 A. - What package type is the NTD20P06LT4G available in?
The NTD20P06LT4G is available in a DPAK (TO-252) package. - What is the junction temperature range of the NTD20P06LT4G?
The junction temperature range is -55 to 150°C. - Is the NTD20P06LT4G 100% UIS tested?
Yes, the NTD20P06LT4G is 100% UIS tested. - What are some common applications for the NTD20P06LT4G?
Common applications include power management, DC-DC converters, motor control, and general-purpose switching. - What technology is used in the NTD20P06LT4G?
The NTD20P06LT4G uses TrenchFET® technology. - What is the power dissipation of the NTD20P06LT4G?
The power dissipation is 2.5 W. - Where can I find detailed specifications for the NTD20P06LT4G?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and Octopart.
