Overview
The NTDV20P06LT4G is a power MOSFET produced by onsemi, designed for high-performance applications. This P-Channel MOSFET is housed in a DPAK package and is known for its robust characteristics, making it suitable for a variety of power management and control systems. The device is AEC Q101 qualified, ensuring its reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage (Continuous) | VGS | -20 | V |
| Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) | VGSM | -30 | V |
| Drain Current (Steady State, TC = 25°C) | ID | -15.5 | A |
| Power Dissipation (Steady State, TC = 25°C) | PD | 65 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -50 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 304 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 2.3 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 80 / 110 | °C/W |
Key Features
- Withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching.
- AEC Q101 qualified for automotive applications.
- Pb-free and RoHS compliant.
- Low on-resistance (RDS(on)) of 0.130 Ω at VGS = -5.0 V, ID = -7.5 A.
- High drain current capability of up to -15.5 A.
- High power dissipation of up to 65 W.
Applications
- Bridge circuits.
- Power supplies.
- Power motor controls.
- DC-DC conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTDV20P06LT4G MOSFET? The maximum drain-to-source voltage is -60 V.
- What is the continuous gate-to-source voltage rating? The continuous gate-to-source voltage rating is -20 V.
- What is the maximum steady-state drain current at 25°C? The maximum steady-state drain current at 25°C is -15.5 A.
- Is the NTDV20P06LT4G MOSFET RoHS compliant? Yes, the NTDV20P06LT4G is Pb-free and RoHS compliant.
- What is the typical on-resistance (RDS(on)) of the MOSFET? The typical on-resistance (RDS(on)) is 0.130 Ω at VGS = -5.0 V, ID = -7.5 A.
- What are some common applications of the NTDV20P06LT4G? Common applications include bridge circuits, power supplies, power motor controls, and DC-DC conversion.
- What is the junction-to-case thermal resistance of the MOSFET? The junction-to-case thermal resistance is 2.3 °C/W.
- What is the maximum single pulse drain-to-source avalanche energy? The maximum single pulse drain-to-source avalanche energy is 304 mJ.
- Is the NTDV20P06LT4G AEC Q101 qualified? Yes, the NTDV20P06LT4G is AEC Q101 qualified.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
