NTD20N06L
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onsemi NTD20N06L

Manufacturer No:
NTD20N06L
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CHAN LL 20A 60V DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD20N06L is a power MOSFET from onsemi, designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is available in DPAK and IPAK packages and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. The device is Pb-free and RoHS compliant, ensuring environmental sustainability. The NTDV20N06L variant is AEC Q101 qualified, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS±15Vdc
Gate-to-Source Voltage - Non-repetitive (tp < 10 ms)VGS±20Vdc
Drain Current - Continuous @ TA = 25°CID20A
Drain Current - Continuous @ TA = 100°CID10A
Gate Threshold VoltageVGS(th)1.0 - 1.6Vdc
Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 10 A)RDS(on)39 - 48
Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)Ciss707 - 990pF
Turn-On Delay Time (VDD = 30 Vdc, ID = 20 A, VGS = 5.0 Vdc, RG = 9.1 Ω)td(on)9.6 - 20ns
Gate Charge (VDS = 48 Vdc, ID = 20 A, VGS = 5.0 Vdc)QT16.6 - 32nC

Key Features

  • AEC Q101 Qualified for the NTDV20N06L variant, ensuring compliance with automotive and other stringent quality standards.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • Low on-resistance (RDS(on)) and low on-voltage (VDS(on)) for efficient switching.
  • Low total gate charge and low diode reverse recovery time for fast switching performance.
  • High speed switching capabilities, suitable for power supplies, converters, and power motor controls.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06L MOSFET?
    The maximum drain-to-source voltage (VDSS) is 60 Vdc.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 20 A.
  3. Is the NTD20N06L Pb-free and RoHS compliant?
    Yes, the NTD20N06L is Pb-free and RoHS compliant.
  4. What are the typical applications of the NTD20N06L?
    The typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. What is the gate threshold voltage range of the NTD20N06L?
    The gate threshold voltage (VGS(th)) range is 1.0 to 1.6 Vdc.
  6. What is the static drain-to-source on-resistance at VGS = 5.0 Vdc and ID = 10 A?
    The static drain-to-source on-resistance (RDS(on)) is 39 to 48 mΩ.
  7. What is the turn-on delay time of the NTD20N06L?
    The turn-on delay time (td(on)) is 9.6 to 20 ns.
  8. What is the gate charge at VDS = 48 Vdc, ID = 20 A, and VGS = 5.0 Vdc?
    The gate charge (QT) is 16.6 to 32 nC.
  9. Is the NTDV20N06L variant AEC Q101 qualified?
    Yes, the NTDV20N06L variant is AEC Q101 qualified.
  10. What is the operating and storage temperature range of the NTD20N06L?
    The operating and storage temperature range is -55 to 175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD20N06L NTD20N06LG NTD24N06L NTD20N06G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta) 24A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V 48mOhm @ 10A, 5V 45mOhm @ 10A, 5V 46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 32 nC @ 5 V 32 nC @ 5 V 30 nC @ 10 V
Vgs (Max) - ±15V ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 990 pF @ 25 V 1140 pF @ 25 V 1015 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.36W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj) 1.36W (Ta), 62.5W (Tj) 1.88W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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