PSMN2R0-30YL,115
  • Share:

Nexperia USA Inc. PSMN2R0-30YL,115

Manufacturer No:
PSMN2R0-30YL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This logic level MOSFET is designed and qualified for use in a wide range of industrial, communications, and other applications where high current handling and low on-resistance are critical. The device is packaged in the LFPAK56 (Power-SO8) package, which is known for its excellent thermal performance and compact size.

Key Specifications

ParameterValue
FET TypeN-Channel
Package / CaseSC-100, SOT-669 (LFPAK56, Power-SO8)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.15V @ 1mA
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2mΩ @ 25A, 10V
Power Dissipation (Max)272W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5217pF @ 15V

Key Features

  • Logic level N-channel MOSFET with low on-resistance (Rds(on)) of 2mΩ at 25A and 10V Vgs.
  • High continuous drain current of 100A at 25°C.
  • Wide operating temperature range from -55°C to 175°C.
  • Compact LFPAK56 (Power-SO8) package for excellent thermal performance.
  • Qualified for use in industrial, communications, and other high-current applications.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

The PSMN2R0-30YL,115 MOSFET is suitable for a variety of applications, including:

  • Industrial power management and control systems.
  • Communications equipment requiring high current handling.
  • Automotive systems, especially those needing high reliability and thermal performance.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN2R0-30YL,115 MOSFET?
    The maximum drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C for this MOSFET?
    The continuous drain current (Id) at 25°C is 100A.
  3. What is the on-resistance (Rds(on)) of the PSMN2R0-30YL,115 MOSFET?
    The on-resistance (Rds(on)) is 2mΩ at 25A and 10V Vgs.
  4. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C (TJ).
  5. What package type is used for the PSMN2R0-30YL,115 MOSFET?
    The MOSFET is packaged in the LFPAK56 (Power-SO8) package.
  6. Is the PSMN2R0-30YL,115 MOSFET ROHS compliant?
    Yes, the PSMN2R0-30YL,115 MOSFET is ROHS3 compliant.
  7. What are some typical applications for this MOSFET?
    Typical applications include industrial power management, communications equipment, automotive systems, power supplies, and motor control systems.
  8. What is the maximum gate charge (Qg) at 10V Vgs for this MOSFET?
    The maximum gate charge (Qg) at 10V Vgs is 87nC.
  9. What is the input capacitance (Ciss) at 15V Vds for this MOSFET?
    The input capacitance (Ciss) at 15V Vds is 5217pF.
  10. What is the maximum power dissipation for the PSMN2R0-30YL,115 MOSFET?
    The maximum power dissipation is 272W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):97W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.68
466

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30YL,115 PSMN2R0-30YLE,115 PSMN4R0-30YL,115 PSMN2R5-30YL,115 PSMN3R0-30YL,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 15A, 10V 2mOhm @ 25A, 10V 4mOhm @ 15A, 10V 2.4mOhm @ 15A, 10V 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 87 nC @ 10 V 36.6 nC @ 10 V 57 nC @ 10 V 45.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 12 V 5217 pF @ 15 V 2090 pF @ 12 V 3468 pF @ 12 V 2822 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 97W (Tc) 272W (Tc) 69W (Tc) 88W (Tc) 81W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP