PSMN2R0-30YL,115
  • Share:

Nexperia USA Inc. PSMN2R0-30YL,115

Manufacturer No:
PSMN2R0-30YL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This logic level MOSFET is designed and qualified for use in a wide range of industrial, communications, and other applications where high current handling and low on-resistance are critical. The device is packaged in the LFPAK56 (Power-SO8) package, which is known for its excellent thermal performance and compact size.

Key Specifications

ParameterValue
FET TypeN-Channel
Package / CaseSC-100, SOT-669 (LFPAK56, Power-SO8)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.15V @ 1mA
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2mΩ @ 25A, 10V
Power Dissipation (Max)272W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5217pF @ 15V

Key Features

  • Logic level N-channel MOSFET with low on-resistance (Rds(on)) of 2mΩ at 25A and 10V Vgs.
  • High continuous drain current of 100A at 25°C.
  • Wide operating temperature range from -55°C to 175°C.
  • Compact LFPAK56 (Power-SO8) package for excellent thermal performance.
  • Qualified for use in industrial, communications, and other high-current applications.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

The PSMN2R0-30YL,115 MOSFET is suitable for a variety of applications, including:

  • Industrial power management and control systems.
  • Communications equipment requiring high current handling.
  • Automotive systems, especially those needing high reliability and thermal performance.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN2R0-30YL,115 MOSFET?
    The maximum drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C for this MOSFET?
    The continuous drain current (Id) at 25°C is 100A.
  3. What is the on-resistance (Rds(on)) of the PSMN2R0-30YL,115 MOSFET?
    The on-resistance (Rds(on)) is 2mΩ at 25A and 10V Vgs.
  4. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C (TJ).
  5. What package type is used for the PSMN2R0-30YL,115 MOSFET?
    The MOSFET is packaged in the LFPAK56 (Power-SO8) package.
  6. Is the PSMN2R0-30YL,115 MOSFET ROHS compliant?
    Yes, the PSMN2R0-30YL,115 MOSFET is ROHS3 compliant.
  7. What are some typical applications for this MOSFET?
    Typical applications include industrial power management, communications equipment, automotive systems, power supplies, and motor control systems.
  8. What is the maximum gate charge (Qg) at 10V Vgs for this MOSFET?
    The maximum gate charge (Qg) at 10V Vgs is 87nC.
  9. What is the input capacitance (Ciss) at 15V Vds for this MOSFET?
    The input capacitance (Ciss) at 15V Vds is 5217pF.
  10. What is the maximum power dissipation for the PSMN2R0-30YL,115 MOSFET?
    The maximum power dissipation is 272W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):97W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.68
466

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30YL,115 PSMN2R0-30YLE,115 PSMN4R0-30YL,115 PSMN2R5-30YL,115 PSMN3R0-30YL,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 15A, 10V 2mOhm @ 25A, 10V 4mOhm @ 15A, 10V 2.4mOhm @ 15A, 10V 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 87 nC @ 10 V 36.6 nC @ 10 V 57 nC @ 10 V 45.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 12 V 5217 pF @ 15 V 2090 pF @ 12 V 3468 pF @ 12 V 2822 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 97W (Tc) 272W (Tc) 69W (Tc) 88W (Tc) 81W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74LVC1G80GV-Q100,1
74LVC1G80GV-Q100,1
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT SC74A
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20