PSMN2R0-30YL,115
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Nexperia USA Inc. PSMN2R0-30YL,115

Manufacturer No:
PSMN2R0-30YL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This logic level MOSFET is designed and qualified for use in a wide range of industrial, communications, and other applications where high current handling and low on-resistance are critical. The device is packaged in the LFPAK56 (Power-SO8) package, which is known for its excellent thermal performance and compact size.

Key Specifications

ParameterValue
FET TypeN-Channel
Package / CaseSC-100, SOT-669 (LFPAK56, Power-SO8)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.15V @ 1mA
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2mΩ @ 25A, 10V
Power Dissipation (Max)272W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5217pF @ 15V

Key Features

  • Logic level N-channel MOSFET with low on-resistance (Rds(on)) of 2mΩ at 25A and 10V Vgs.
  • High continuous drain current of 100A at 25°C.
  • Wide operating temperature range from -55°C to 175°C.
  • Compact LFPAK56 (Power-SO8) package for excellent thermal performance.
  • Qualified for use in industrial, communications, and other high-current applications.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

The PSMN2R0-30YL,115 MOSFET is suitable for a variety of applications, including:

  • Industrial power management and control systems.
  • Communications equipment requiring high current handling.
  • Automotive systems, especially those needing high reliability and thermal performance.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN2R0-30YL,115 MOSFET?
    The maximum drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C for this MOSFET?
    The continuous drain current (Id) at 25°C is 100A.
  3. What is the on-resistance (Rds(on)) of the PSMN2R0-30YL,115 MOSFET?
    The on-resistance (Rds(on)) is 2mΩ at 25A and 10V Vgs.
  4. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C (TJ).
  5. What package type is used for the PSMN2R0-30YL,115 MOSFET?
    The MOSFET is packaged in the LFPAK56 (Power-SO8) package.
  6. Is the PSMN2R0-30YL,115 MOSFET ROHS compliant?
    Yes, the PSMN2R0-30YL,115 MOSFET is ROHS3 compliant.
  7. What are some typical applications for this MOSFET?
    Typical applications include industrial power management, communications equipment, automotive systems, power supplies, and motor control systems.
  8. What is the maximum gate charge (Qg) at 10V Vgs for this MOSFET?
    The maximum gate charge (Qg) at 10V Vgs is 87nC.
  9. What is the input capacitance (Ciss) at 15V Vds for this MOSFET?
    The input capacitance (Ciss) at 15V Vds is 5217pF.
  10. What is the maximum power dissipation for the PSMN2R0-30YL,115 MOSFET?
    The maximum power dissipation is 272W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):97W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN2R0-30YL,115 PSMN2R0-30YLE,115 PSMN4R0-30YL,115 PSMN2R5-30YL,115 PSMN3R0-30YL,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 15A, 10V 2mOhm @ 25A, 10V 4mOhm @ 15A, 10V 2.4mOhm @ 15A, 10V 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 87 nC @ 10 V 36.6 nC @ 10 V 57 nC @ 10 V 45.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 12 V 5217 pF @ 15 V 2090 pF @ 12 V 3468 pF @ 12 V 2822 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 97W (Tc) 272W (Tc) 69W (Tc) 88W (Tc) 81W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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