Overview
The PSMN2R5-30YL,115 is an N-channel MOSFET manufactured by Nexperia USA Inc., designed for efficient power management within various electronic systems. This MOSFET features a maximum drain-source voltage of 30 V and can handle a continuous drain current of up to 100 A at a case temperature (Tc), with a power dissipation capability of 88 W. It is packaged in a compact surface-mount LFPAK56, Power-SO8 format, which offers efficient space utilization on PCBs. The device is built using TrenchMOS technology, ensuring high efficiency due to low switching and conduction losses.
Key Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Technology | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 100 A (Tc) |
| Rds On - Drain-Source Resistance | 2.4 mOhms @ 15 A, 10 V | Vgs - Gate-Source Voltage | ±20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.15 V @ 1 mA | Qg - Gate Charge | 57 nC @ 10 V |
| Minimum Operating Temperature | -55°C | Maximum Operating Temperature | +175°C (TJ) |
| Pd - Power Dissipation | 88 W (Tc) | Channel Mode | Enhancement |
| Package Type | LFPAK56, Power-SO8 | Mounting Style | Surface Mount |
| Input Capacitance (Ciss) | 3468 pF @ 12 V | Gate Charge (Qg) | 57 nC @ 10 V |
Key Features
- High efficiency due to low switching and conduction losses, making it suitable for applications requiring minimal power loss.
- Suitable for logic level gate drive sources, allowing for easy integration with various control circuits.
- Compact LFPAK56, Power-SO8 package, which offers efficient space utilization on PCBs.
- Enhancement mode operation, providing reliable and controlled current flow.
- Wide operating temperature range from -55°C to +175°C, ensuring robust performance in various environmental conditions.
Applications
- Class-D amplifiers, where high efficiency and low distortion are critical.
- DC-to-DC converters, benefiting from the MOSFET's low switching losses and high current handling.
- Motor control systems, requiring reliable and efficient power management.
- Server power supplies, where high power dissipation and efficiency are essential).
Q & A
- What is the maximum drain-source voltage of the PSMN2R5-30YL,115 MOSFET?
The maximum drain-source voltage is 30 V).
- What is the continuous drain current rating of the PSMN2R5-30YL,115 at a case temperature (Tc)?
The continuous drain current rating is 100 A at a case temperature (Tc)).
- What is the power dissipation capability of the PSMN2R5-30YL,115?
The power dissipation capability is 88 W at the case temperature (Tc)).
- What is the package type of the PSMN2R5-30YL,115?
The package type is LFPAK56, Power-SO8).
- What is the operating temperature range of the PSMN2R5-30YL,115?
The operating temperature range is from -55°C to +175°C (TJ)).
- What is the gate-source threshold voltage of the PSMN2R5-30YL,115?
The gate-source threshold voltage is 2.15 V @ 1 mA).
- What is the typical drain-source on-state resistance of the PSMN2R5-30YL,115?
The typical drain-source on-state resistance is 2.4 mOhms @ 15 A, 10 V).
- Is the PSMN2R5-30YL,115 suitable for new designs?
No, the PSMN2R5-30YL,115 is not recommended for new designs (NRND)).
- What are some common applications of the PSMN2R5-30YL,115?
Common applications include Class-D amplifiers, DC-to-DC converters, motor control systems, and server power supplies).
- What technology is used in the PSMN2R5-30YL,115 MOSFET?
The PSMN2R5-30YL,115 uses TrenchMOS technology).
