Overview
The PSMN3R0-30YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is part of the NextPowerS3 portfolio and utilizes Nexperia's TrenchMOS technology. It is packaged in a plastic single-ended surface-mounted package (LFPAK56), specifically the SOT669 package. This device is designed for high efficiency and is suitable for various industrial and communications applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | Tj ≥25 °C; Tj ≤175 °C | - | - | 30 | V |
| VDSM (Peak Drain-Source Voltage) | tp ≤25 ns; f ≤500 kHz; EDS(AL) ≤200 nJ; pulsed | - | - | 35 | V |
| VDGR (Drain-Gate Voltage) | Tj ≥25 °C; Tj ≤175 °C; RGS = 20 kΩ | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| ID (Drain Current) | Tmb = 25 °C; VGS = 10 V | - | - | 100 | A |
| RDS(on) (Drain-Source On-Resistance) | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | - | 3 | mΩ |
| PTOT (Total Power Dissipation) | Tc = 25 °C | - | - | 81 | W |
Key Features
- High efficiency due to low switching and conduction losses.
- Suitable for logic level gate drive sources.
- Utilizes Nexperia's TrenchMOS technology for enhanced performance.
- LFPAK56 package (SOT669) for surface mount applications.
- High current handling capability up to 100 A.
Applications
- Class-D amplifiers.
- DC-to-DC converters.
- Motor control systems.
- Server power supplies.
- Industrial and communications applications.
Q & A
- What is the maximum drain-source voltage of the PSMN3R0-30YL,115? The maximum drain-source voltage is 30 V.
- What is the typical on-resistance of this MOSFET? The typical on-resistance (RDS(on)) is 3 mΩ at VGS = 10 V and ID = 25 A.
- What is the maximum drain current this MOSFET can handle? The maximum drain current (ID) is 100 A.
- What type of package does the PSMN3R0-30YL,115 use? It uses the LFPAK56 package (SOT669).
- What are some common applications for this MOSFET? Common applications include Class-D amplifiers, DC-to-DC converters, motor control systems, and server power supplies.
- What technology does this MOSFET utilize? It utilizes Nexperia's TrenchMOS technology.
- What is the maximum total power dissipation for this MOSFET? The maximum total power dissipation (PTOT) is 81 W at Tc = 25 °C.
- What is the gate-source threshold voltage range for this MOSFET? The gate-source threshold voltage (VGS(th)) ranges from 1.3 V to 2.15 V at ID = 1 mA and Tj = 25 °C.
- Can this MOSFET be used in high-frequency applications? Yes, it is suitable for high-frequency applications due to its low switching losses.
- How can I order samples of the PSMN3R0-30YL,115? Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.
