Overview
The MMBT3904LT1H is a general-purpose NPN silicon transistor produced by onsemi. This device is designed for low-power surface mount applications and is housed in the SOT-23 package. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of electronic designs. The transistor is AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Base Cutoff Current | IBL | - 50 nA | VCE = 30 Vdc, VEB = 3.0 Vdc |
| Small-Signal Current Gain | hfe | 100 - 400 | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz |
| Delay Time | td | - 35 ns | VCC = 3.0 Vdc, VBE = -0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc |
| Rise Time | tr | - 35 ns | IC = 10 mAdc, IB1 = 1.0 mAdc |
| Storage Time | ts | - 200 ns | VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other high-reliability applications.
- Ultra-small surface mount package (SOT-23) for compact designs.
- Epitaxial planar die construction for improved performance.
- High collector-emitter breakdown voltage (VCEO) of 40 Vdc.
- Low noise figure, making it suitable for audio and other low-noise applications.
Applications
- General-purpose amplifier applications.
- Automotive electronics due to its AEC-Q101 qualification.
- Audio circuits requiring low noise figures.
- Switching and digital circuits where fast switching times are necessary.
- Consumer electronics and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBT3904LT1H?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- Is the MMBT3904LT1H RoHS compliant?
- What is the typical small-signal current gain (hfe) of the MMBT3904LT1H?
The typical small-signal current gain (hfe) ranges from 100 to 400.
- What is the delay time (td) of the MMBT3904LT1H?
The delay time (td) is approximately 35 ns.
- Is the MMBT3904LT1H suitable for automotive applications?
- What is the package type of the MMBT3904LT1H?
The MMBT3904LT1H is housed in the SOT-23 package.
- What is the maximum collector current (IC) of the MMBT3904LT1H?
The maximum collector current (IC) is 200 mAdc.
- What are the typical operating temperatures for the MMBT3904LT1H?
The junction and storage temperature range is from -65°C to +150°C.
- Is the MMBT3904LT1H suitable for low-noise applications?
- What is the rise time (tr) of the MMBT3904LT1H?
The rise time (tr) is approximately 35 ns.
