Overview
The NSV2SC5658M3T5G is an NPN silicon general-purpose amplifier transistor produced by onsemi. This transistor is designed for low power surface mount applications, particularly where board space is limited. It is housed in the SOT-723 package, making it ideal for compact electronic designs. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring stringent quality standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | V(BR)CBO | 50 | Vdc |
| Collector-Emitter Voltage | V(BR)CEO | 50 | Vdc |
| Emitter-Base Voltage | V(BR)EBO | 7.0 | Vdc |
| Collector Current - Continuous | IC | 150 | mAdc |
| Power Dissipation | PD | 260 | mW |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | Tstg | -55 ~ +150 | °C |
| Transition Frequency | fT | 180 | MHz |
| DC Current Gain (hFE) | hFE | 120 - 460 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 0.5 | Vdc |
Key Features
- High DC current gain (hFE) of 120 to 460.
- Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V.
- ESD performance: Human Body Model ≥ 2000 V, Machine Model ≥ 200 V.
- Compact SOT-723 package, reducing board space.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Pb-free device.
Applications
The NSV2SC5658M3T5G transistor is suitable for a variety of general-purpose amplifier applications, including but not limited to:
- Automotive electronics due to its AEC-Q101 qualification.
- Consumer electronics where compact design is essential.
- Industrial control systems requiring reliable and efficient amplification.
- Audio and signal processing circuits.
Q & A
- What is the maximum collector-emitter voltage of the NSV2SC5658M3T5G transistor?
The maximum collector-emitter voltage is 50 Vdc. - What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) ranges from 120 to 460. - What is the maximum junction temperature for this device?
The maximum junction temperature is 150 °C. - Is the NSV2SC5658M3T5G transistor Pb-free?
Yes, the NSV2SC5658M3T5G is a Pb-free device. - What is the transition frequency of this transistor?
The transition frequency (fT) is 180 MHz. - What package type is used for the NSV2SC5658M3T5G transistor?
The transistor is housed in the SOT-723 package. - Is the NSV2SC5658M3T5G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications. - What is the maximum collector current for this transistor?
The maximum collector current is 150 mA. - What is the storage temperature range for the NSV2SC5658M3T5G?
The storage temperature range is -55 °C to +150 °C. - Does the NSV2SC5658M3T5G have any special ESD protection features?
Yes, it has ESD performance of ≥ 2000 V for the Human Body Model and ≥ 200 V for the Machine Model.
