NJVMJB44H11T4G
  • Share:

Fairchild Semiconductor NJVMJB44H11T4G

Manufacturer No:
NJVMJB44H11T4G
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
TRANS NPN 80V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJB44H11T4G is a complementary power transistor produced by Onsemi (formerly Fairchild Semiconductor). This NPN transistor is part of the MJB44H11 series and is designed for general-purpose power amplification and switching applications. It is packaged in a D2PAK surface mount configuration, making it suitable for a variety of power management and amplification roles.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Emitter-Base Voltage VEB 5 Vdc
Collector Current - Continuous IC 10 Adc
Collector Current - Peak IC 20 Adc
Total Power Dissipation @ TC = 25°C PD 50 W
Thermal Resistance, Junction-to-Case RJC 2.5 °C/W
Thermal Resistance, Junction-to-Ambient RJA 75 °C/W
Operating and Storage Junction Temperature Range TJ, Tstg -55 to 150 °C
Collector-Emitter Saturation Voltage VCE(sat) 1.0 Vdc @ IC = 8 Adc, IB = 0.4 Adc
Base-Emitter Saturation Voltage VBE(sat) 1.5 Vdc @ IC = 8 Adc, IB = 0.8 Adc
DC Current Gain hFE 60 - @ VCE = 1 Vdc, IC = 2 Adc

Key Features

  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.0 V (Max) @ 8.0 A, ensuring efficient operation.
  • Fast Switching Speeds: Suitable for high-speed switching applications.
  • Complementary Pairs: Simplifies design by providing matching NPN and PNP transistors.
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
  • Pb-Free Packages: Environmentally friendly packaging.

Applications

The NJVMJB44H11T4G is designed for various power management and amplification applications, including:

  • Output or driver stages in switching regulators and converters.
  • Power amplifiers.
  • Automotive and industrial power management systems.
  • General-purpose power amplification and switching.

Q & A

  1. What is the maximum collector-emitter voltage for the NJVMJB44H11T4G?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the continuous collector current rating?

    The continuous collector current (IC) is 10 Adc.

  3. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RJC) is 2.5 °C/W.

  4. Is the NJVMJB44H11T4G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the collector-emitter saturation voltage?

    The collector-emitter saturation voltage (VCE(sat)) is 1.0 V (Max) @ IC = 8 Adc, IB = 0.4 Adc.

  6. What are the ESD ratings for this transistor?

    The ESD ratings are Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.

  7. What is the operating junction temperature range?

    The operating and storage junction temperature range is -55 to 150 °C.

  8. Is the NJVMJB44H11T4G available in Pb-Free packages?

    Yes, Pb-Free packages are available.

  9. What are some typical applications for this transistor?

    Typical applications include output or driver stages in switching regulators, converters, power amplifiers, and general-purpose power amplification and switching.

  10. What is the DC current gain for this transistor?

    The DC current gain (hFE) is 60 @ VCE = 1 Vdc, IC = 2 Adc.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:2 W
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
0 Remaining View Similar

In Stock

$0.63
630

Please send RFQ , we will respond immediately.

Same Series
NJVMJB44H11T4G
NJVMJB44H11T4G
TRANS NPN 80V 10A D2PAK
NJVMJB45H11T4G
NJVMJB45H11T4G
TRANS PNP 80V 10A D2PAK
MJB44H11T4G
MJB44H11T4G
TRANS NPN 80V 10A D2PAK
MJB45H11G
MJB45H11G
TRANS PNP 80V 10A D2PAK
MJB45H11T4G
MJB45H11T4G
TRANS PNP 80V 10A D2PAK
MJB44H11
MJB44H11
TRANS NPN 80V 10A D2PAK
MJB45H11
MJB45H11
TRANS PNP 80V 10A D2PAK

Similar Products

Part Number NJVMJB44H11T4G NJVMJB45H11T4G NJVMJD44H11T4G
Manufacturer Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 10 A 10 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA 10µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V 60 @ 2A, 1V
Power - Max 2 W 2 W 1.75 W
Frequency - Transition 50MHz 40MHz 85MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D²PAK D²PAK DPAK

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BZX55C3V3
BZX55C3V3
Fairchild Semiconductor
DIODE ZENER 3.3V 500MW DO35
BZX84C5V6-FS
BZX84C5V6-FS
Fairchild Semiconductor
DIODE ZENER 5.6V 0.25W 5% UNI
MJE182STU
MJE182STU
Fairchild Semiconductor
TRANS NPN 80V 3A TO126-3
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
BC856CMTF
BC856CMTF
Fairchild Semiconductor
TRANS PNP 65V 0.1A SOT23-3
FDD8424H-F085A
FDD8424H-F085A
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
FQT3P20TF_SB82100
FQT3P20TF_SB82100
Fairchild Semiconductor
1-ELEMENT, P-CHANNEL POWER MOSFE
CD4051BCSJX
CD4051BCSJX
Fairchild Semiconductor
SINGLE-ENDED MUX, 8 CHANNEL
CD4040BCM
CD4040BCM
Fairchild Semiconductor
BINARY COUNTER
CD4081BCMX
CD4081BCMX
Fairchild Semiconductor
CMOS QUAD 2-INPUT AND GATE
UC3842ADX
UC3842ADX
Fairchild Semiconductor
SWITCHING CONTROLLER
UC3842AD
UC3842AD
Fairchild Semiconductor
SWITCHING CONTROLLER