Overview
The NJVMJB44H11T4G is a complementary power transistor produced by Onsemi (formerly Fairchild Semiconductor). This NPN transistor is part of the MJB44H11 series and is designed for general-purpose power amplification and switching applications. It is packaged in a D2PAK surface mount configuration, making it suitable for a variety of power management and amplification roles.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | IC | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 50 | W |
| Thermal Resistance, Junction-to-Case | RJC | 2.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 75 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc @ IC = 8 Adc, IB = 0.4 Adc |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc @ IC = 8 Adc, IB = 0.8 Adc |
| DC Current Gain | hFE | 60 | - @ VCE = 1 Vdc, IC = 2 Adc |
Key Features
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.0 V (Max) @ 8.0 A, ensuring efficient operation.
- Fast Switching Speeds: Suitable for high-speed switching applications.
- Complementary Pairs: Simplifies design by providing matching NPN and PNP transistors.
- ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
- Pb-Free Packages: Environmentally friendly packaging.
Applications
The NJVMJB44H11T4G is designed for various power management and amplification applications, including:
- Output or driver stages in switching regulators and converters.
- Power amplifiers.
- Automotive and industrial power management systems.
- General-purpose power amplification and switching.
Q & A
- What is the maximum collector-emitter voltage for the NJVMJB44H11T4G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating?
The continuous collector current (IC) is 10 Adc.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RJC) is 2.5 °C/W.
- Is the NJVMJB44H11T4G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the collector-emitter saturation voltage?
The collector-emitter saturation voltage (VCE(sat)) is 1.0 V (Max) @ IC = 8 Adc, IB = 0.4 Adc.
- What are the ESD ratings for this transistor?
The ESD ratings are Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
- What is the operating junction temperature range?
The operating and storage junction temperature range is -55 to 150 °C.
- Is the NJVMJB44H11T4G available in Pb-Free packages?
Yes, Pb-Free packages are available.
- What are some typical applications for this transistor?
Typical applications include output or driver stages in switching regulators, converters, power amplifiers, and general-purpose power amplification and switching.
- What is the DC current gain for this transistor?
The DC current gain (hFE) is 60 @ VCE = 1 Vdc, IC = 2 Adc.
