Overview
The NJVMJD44H11T4G is a complementary power transistor produced by onsemi, designed for general-purpose power and switching applications. This NPN transistor is part of the MJD44H11 series and is packaged in a DPAK (TO-252) surface mount case. It is electrically similar to the popular D44H series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | IC = 30 mA, IB = 0 A | - | - | 60 | V |
| Collector Cut-off Current | ICES | VCE = 80 V, VBE = 0 V | - | - | 10 | μA |
| Emitter Cut-off Current | IEBO | VEB = 5 V, IC = 0 A | - | - | 50 | μA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 8 A, IB = 0.4 A | - | - | 1 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 8 A, IB = 0.8 A | - | - | 1.5 | V |
| DC Current Gain | hFE | IC = 2 A, VCE = 1 V | 60 | - | - | - |
| DC Current Gain | hFE | IC = 4 A, VCE = 1 V | 40 | - | - | - |
| Thermal Resistance, Junction-to-Case | RJC | - | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | - | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | - | - | - | 260 | °C |
Key Features
- Lead formed for surface mount application in plastic sleeves.
- Electrically similar to popular D44H/D45H series.
- Low collector-emitter saturation voltage.
- Fast switching speeds.
- Complementary pairs simplify designs.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The NJVMJD44H11T4G is designed for general-purpose power and switching applications, including:
- Output or driver stages in switching regulators.
- Converters.
- Power amplifiers.
- Automotive applications due to its AEC-Q101 qualification.
Q & A
- What is the collector-emitter sustaining voltage of the NJVMJD44H11T4G?
The collector-emitter sustaining voltage (VCEO(sus)) is 60 V when IC = 30 mA and IB = 0 A.
- What is the collector-emitter saturation voltage of this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 1 V when IC = 8 A and IB = 0.4 A.
- What is the DC current gain (hFE) of the NJVMJD44H11T4G?
The DC current gain (hFE) is 60 when IC = 2 A and VCE = 1 V, and 40 when IC = 4 A and VCE = 1 V.
- What is the thermal resistance, junction-to-case (RJC) of this transistor?
The thermal resistance, junction-to-case (RJC), is 6.25 °C/W.
- Is the NJVMJD44H11T4G RoHS compliant?
Yes, the NJVMJD44H11T4G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications of the NJVMJD44H11T4G?
Typical applications include output or driver stages in switching regulators, converters, and power amplifiers, as well as automotive applications).
- What is the lead temperature for soldering?
The lead temperature for soldering is 260 °C).
- Is the NJVMJD44H11T4G AEC-Q101 qualified?
Yes, the NJVMJD44H11T4G is AEC-Q101 qualified and PPAP capable).
- What is the package type of the NJVMJD44H11T4G?
The package type is DPAK (TO-252) for surface mount applications).
- What are the key features of the epoxy used in this transistor?
The epoxy meets UL 94 V-0 @ 0.125 in).
