Overview
The NJVMJD45H11T4G is a PNP bipolar junction transistor (BJT) produced by onsemi. It is part of the NJVMJD4xH11xxG series, designed for general-purpose power and switching applications. This transistor is housed in a DPAK (TO-252-2) package, making it suitable for surface mount applications. The NJVMJD45H11T4G is electrically similar to the popular D45H series and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 8 | Adc |
| Collector Current - Peak | ICM | 16 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Total Power Dissipation @ TA = 25°C | PD | 1.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | 260 | °C |
Key Features
- PNP bipolar junction transistor in DPAK (TO-252-2) package for surface mount applications.
- Electrically similar to the popular D45H series.
- Low collector-emitter saturation voltage (VCE(sat) = 1 Vdc).
- Fast switching speeds with delay and rise times of 135 ns and fall time of 100 ns.
- Complementary pairs simplify designs (NJV prefix for automotive and other applications).
- AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Epoxy meets UL 94 V-0 @ 0.125 in.
Applications
The NJVMJD45H11T4G is designed for general-purpose power and switching applications, including:
- Output or driver stages in switching regulators.
- Converters and power amplifiers.
- Automotive and other applications requiring unique site and control change requirements.
Q & A
- What is the maximum collector-emitter voltage of the NJVMJD45H11T4G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 8 Adc.
- What is the peak collector current rating?
The peak collector current (ICM) is 16 Adc.
- What is the total power dissipation at TC = 25°C?
The total power dissipation (PD) at TC = 25°C is 20 W.
- Is the NJVMJD45H11T4G RoHS compliant?
- What are the thermal resistance values for this transistor?
The thermal resistance from junction to case (RJC) is 6.25 °C/W, and from junction to ambient (RJA) is 71.4 °C/W.
- What are the switching times for this transistor?
The delay and rise times are 135 ns, and the fall time is 100 ns.
- Is the NJVMJD45H11T4G suitable for automotive applications?
- What is the lead temperature for soldering?
The lead temperature for soldering (TL) is 260 °C.
- What package type does the NJVMJD45H11T4G come in?
