Overview
The MJB44H11T4G is a complementary power transistor produced by onsemi, designed for general-purpose power amplification and switching applications. This NPN transistor is part of the MJB44H11 series and is packaged in a D2PAK surface mount configuration. It is suitable for use in output or driver stages in various applications such as switching regulators, converters, and power amplifiers.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | IC | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 50 | W |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | 2.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc @ IC = 8 Adc, IB = 0.4 Adc |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc @ IC = 8 Adc, IB = 0.8 Adc |
Key Features
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.0 V (Max) @ 8.0 A
- Fast Switching Speeds
- Complementary Pairs Simplify Designs
- Epoxy Meets UL 94 V-0 @ 0.125 in
- ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Packages are Available
Applications
The MJB44H11T4G is suitable for various power amplification and switching applications, including:
- Output or driver stages in switching regulators and converters
- Power amplifiers
- Automotive applications requiring AEC-Q101 qualification
- General-purpose power amplification and switching
Q & A
- What is the collector-emitter voltage rating of the MJB44H11T4G? The collector-emitter voltage rating is 80 Vdc.
- What is the maximum continuous collector current for the MJB44H11T4G? The maximum continuous collector current is 10 Adc.
- What is the thermal resistance from junction to case for the MJB44H11T4G? The thermal resistance from junction to case is 2.5 °C/W.
- Is the MJB44H11T4G ESD rated? Yes, it has ESD ratings of Human Body Model, 3B > 8000 V and Machine Model, C > 400 V.
- What package type is the MJB44H11T4G available in? It is available in a D2PAK surface mount package.
- Is the MJB44H11T4G Pb-free? Yes, Pb-free packages are available.
- What are the operating and storage junction temperature ranges for the MJB44H11T4G? The operating and storage junction temperature range is -55 to 150 °C.
- What is the collector-emitter saturation voltage for the MJB44H11T4G? The collector-emitter saturation voltage is 1.0 Vdc at IC = 8 Adc, IB = 0.4 Adc.
- Is the MJB44H11T4G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What are some typical applications for the MJB44H11T4G? Typical applications include output or driver stages in switching regulators, converters, power amplifiers, and automotive applications.
