Overview
The MJB45H11G is a PNP complementary power transistor produced by onsemi. It is designed for general-purpose power amplification and switching applications. This transistor is part of the MJB45H11 series, which includes Pb-free packages and is suitable for various power management tasks.
The device is available in the D2PAK package, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, especially for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | IC | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 50 | W |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 2.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 75 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc @ IC = 8 Adc, IB = 0.4 Adc |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc @ IC = 8 Adc, IB = 0.8 Adc |
| DC Current Gain | hFE | 40-60 | - @ VCE = 1 Vdc, IC = 2-4 Adc |
| Gain Bandwidth Product | fT | 40 | MHz @ IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz |
Key Features
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.0 V (Max) @ 8.0 A, ensuring efficient operation.
- Fast Switching Speeds: Suitable for high-speed switching applications.
- Complementary Pairs: Simplifies designs by providing matching NPN and PNP transistors.
- ESD Ratings: Human Body Model > 8000 V, Machine Model > 400 V, enhancing reliability.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
- Pb-Free Packages: Environmentally friendly and compliant with RoHS standards.
Applications
The MJB45H11G is versatile and can be used in various applications, including:
- Switching Regulators: Efficient power management in switching regulator circuits.
- Converters: Suitable for use in DC-DC converters and other power conversion applications.
- Power Amplifiers: Ideal for output or driver stages in power amplifiers.
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
Q & A
- What is the maximum collector-emitter voltage for the MJB45H11G?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the continuous collector current rating for the MJB45H11G?
The continuous collector current (IC) is 10 Adc.
- What is the thermal resistance from junction to case for the MJB45H11G?
The thermal resistance from junction to case (RJC) is 2.5 °C/W.
- Is the MJB45H11G Pb-free?
- What is the gain bandwidth product for the MJB45H11G?
The gain bandwidth product (fT) is 40 MHz at IC = 0.5 Adc, VCE = 10 Vdc, and f = 20 MHz.
- What are the ESD ratings for the MJB45H11G?
The ESD ratings are Human Body Model > 8000 V and Machine Model > 400 V.
- What is the operating temperature range for the MJB45H11G?
The operating and storage junction temperature range is -55 to 150 °C.
- Is the MJB45H11G suitable for automotive applications?
- What is the collector-emitter saturation voltage for the MJB45H11G?
The collector-emitter saturation voltage (VCE(sat)) is 1.0 V (Max) @ IC = 8 Adc, IB = 0.4 Adc.
- What package type is the MJB45H11G available in?
The MJB45H11G is available in the D2PAK package for surface mount applications.
