Overview
The IRFR5305TRPBF is a single P-Channel HEXFET Power MOSFET produced by Infineon Technologies. This component is part of the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is packaged in a D-Pak configuration, designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The IRFR5305TRPBF is known for its fast switching speed, ruggedized device design, and high operating temperature, making it an efficient and reliable choice for various applications.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|
| VDS (Drain-to-Source Voltage) | - | - | -55 | V | - |
| RDS(on) (On-Resistance) | - | 0.065 | - | Ω | VGS = -10V |
| ID (Continuous Drain Current) at TC = 25°C | - | - | -31 | A | VGS = -10V |
| ID (Continuous Drain Current) at TC = 100°C | - | - | -22 | A | VGS = -10V |
| IDM (Pulsed Drain Current) | - | - | -110 | A | - |
| PD (Power Dissipation) at TC = 25°C | - | - | 110 | W | - |
| VGS (Gate-to-Source Voltage) | - | - | ±20 | V | - |
| TJ (Operating Junction Temperature) | -55 | - | 175 | °C | - |
| TSTG (Storage Temperature Range) | -55 | - | 175 | °C | - |
Key Features
- RoHS Compliant: Ensures environmental compliance.
- Low RDS(on): Offers extremely low on-resistance per silicon area.
- Fast Switching: Provides fast switching speeds, enhancing efficiency in applications.
- Fully Avalanche Rated: Capable of withstanding high energy pulses.
- High Operating Temperature: Operates up to 175°C, making it suitable for demanding environments.
- Dynamic dv/dt Rating: Handles high dv/dt rates, ensuring reliability in dynamic applications.
- Industry-leading Quality: Built with advanced processing techniques for high reliability and performance.
Applications
The IRFR5305TRPBF is versatile and can be used in a wide variety of applications, including:
- Power Supplies: Due to its high efficiency and fast switching capabilities.
- Motor Control: For its ability to handle high current and voltage requirements.
- DC-DC Converters: Where low on-resistance and fast switching are crucial.
- Automotive Systems: Given its high operating temperature and rugged design.
- Industrial Automation: For its reliability and performance in demanding industrial environments.
Q & A
- What is the maximum drain-to-source voltage of the IRFR5305TRPBF?
The maximum drain-to-source voltage (VDS) is -55V. - What is the typical on-resistance (RDS(on)) of the IRFR5305TRPBF?
The typical on-resistance is 0.065Ω at VGS = -10V. - What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current is -31A at TC = 25°C and -22A at TC = 100°C, both at VGS = -10V. - What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is -110A. - What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) is 110W at TC = 25°C. - What is the gate-to-source voltage range?
The gate-to-source voltage (VGS) range is ±20V. - What is the operating junction temperature range?
The operating junction temperature (TJ) range is -55°C to 175°C. - Is the IRFR5305TRPBF RoHS compliant?
Yes, the IRFR5305TRPBF is RoHS compliant. - What are the key benefits of using the IRFR5305TRPBF?
The key benefits include low RDS(on), fast switching, fully avalanche rated, and high operating temperature. - In what types of applications is the IRFR5305TRPBF commonly used?
It is commonly used in power supplies, motor control, DC-DC converters, automotive systems, and industrial automation.
