IRFR5505TRPBF
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Infineon Technologies IRFR5505TRPBF

Manufacturer No:
IRFR5505TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 55V 18A DPAK
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The IRFR5505TRPBF is a single P-Channel power MOSFET produced by Infineon Technologies. This device is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of power MOSFETs. The IRFR5505TRPBF is housed in a D-Pak (TO-252-2) package, making it suitable for various high-power applications. It is known for its high efficiency, reliability, and robust performance characteristics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
RDS(on) (On-Resistance)0.11 Ω @ VGS = 10 V
ID (Continuous Drain Current)18 A
PD (Power Dissipation)57 W
VGS(th) (Gate-Source Threshold Voltage)4 V @ ID = 250 μA
PackageD-Pak (TO-252-2)
RoHS ComplianceYes

Key Features

  • High efficiency and low on-resistance
  • Robust and reliable performance
  • High current handling capability (up to 18 A)
  • High voltage rating (up to 55 V)
  • D-Pak (TO-252-2) package for easy mounting and thermal management
  • RoHS compliant, ensuring environmental sustainability

Applications

The IRFR5505TRPBF is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switch mode power supplies
  • Automotive systems
  • Industrial power management systems

Q & A

  1. What is the maximum drain-source voltage of the IRFR5505TRPBF?
    The maximum drain-source voltage is 55 V.
  2. What is the on-resistance of the IRFR5505TRPBF at VGS = 10 V?
    The on-resistance is 0.11 Ω.
  3. What is the continuous drain current rating of the IRFR5505TRPBF?
    The continuous drain current rating is 18 A.
  4. What is the power dissipation rating of the IRFR5505TRPBF?
    The power dissipation rating is 57 W.
  5. What package type is the IRFR5505TRPBF available in?
    The IRFR5505TRPBF is available in a D-Pak (TO-252-2) package.
  6. Is the IRFR5505TRPBF RoHS compliant?
    Yes, the IRFR5505TRPBF is RoHS compliant.
  7. What are some common applications for the IRFR5505TRPBF?
    Common applications include power supplies, motor control systems, switch mode power supplies, automotive systems, and industrial power management systems.
  8. What is the gate-source threshold voltage of the IRFR5505TRPBF?
    The gate-source threshold voltage is 4 V at ID = 250 μA.
  9. Why is the IRFR5505TRPBF preferred in high-power applications?
    The IRFR5505TRPBF is preferred due to its high efficiency, low on-resistance, and robust performance characteristics.
  10. Where can I find detailed specifications for the IRFR5505TRPBF?
    Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites such as Digi-Key and Heisener.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number IRFR5505TRPBF IRFR5305TRPBF IRFR5505GTRPBF IRFR5505TRLPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Not For New Designs
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 31A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V 65mOhm @ 16A, 10V 110mOhm @ 9.6A, 10V 110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 63 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 1200 pF @ 25 V 650 pF @ 25 V 650 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 57W (Tc) 110W (Tc) 57W (Tc) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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