IRF7410TRPBF-1
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Infineon Technologies IRF7410TRPBF-1

Manufacturer No:
IRF7410TRPBF-1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7410TRPBF-1 is a -12V single P-Channel HEXFET Power MOSFET manufactured by Infineon Technologies. This device is packaged in a standard SO-8 package, which is industry-standard and compatible with existing surface mount techniques. The MOSFET is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Min. Typ. Max. Units
VDS (Drain-Source Voltage) - - -12 V
ID @ TA = 25°C (Continuous Drain Current, VGS @ -4.5V) - - -16 A
ID @ TA = 70°C (Continuous Drain Current, VGS @ -4.5V) - - -13 A
IDM (Pulsed Drain Current) - - -65 A
PD @ TA = 25°C (Power Dissipation) - - 2.5 W
PD @ TA = 70°C (Power Dissipation) - - 1.6 W
VGS (Gate-to-Source Voltage) - - ±8 V
TJ, TSTG (Junction and Storage Temperature Range) -55 - +150 °C
RDS(on) max (@VGS = -4.5V) - - 7
RDS(on) max (@VGS = -2.5V) - - 9
RDS(on) max (@VGS = -1.8V) - - 13

Key Features

  • Industry-standard pinout SO-8 Package: Ensures multi-vendor compatibility and ease of integration with existing surface mount techniques.
  • RoHS Compliant, Halogen-Free: Environmentally friendlier and compliant with current environmental regulations.
  • MSL1, Industrial qualification: Increased reliability and suitability for industrial applications.
  • Low On-Resistance: RDS(on) as low as 7 mΩ at VGS = -4.5V, enhancing efficiency in power management.

Applications

The IRF7410TRPBF-1 is suitable for a variety of power management applications, including:

  • DC-DC Converters: Ideal for use in buck, boost, and buck-boost converters due to its low on-resistance and high current handling capabilities.
  • Power Supplies: Used in switching power supplies for efficient power delivery.
  • Motor Control: Suitable for motor control circuits requiring high current and low on-resistance.
  • General Power Switching: Can be used in various power switching applications where high reliability and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the IRF7410TRPBF-1?

    The maximum drain-source voltage (VDS) is -12V.

  2. What is the continuous drain current at 25°C with VGS = -4.5V?

    The continuous drain current (ID) at 25°C with VGS = -4.5V is -16A.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.5W.

  4. What is the gate-to-source voltage range?

    The gate-to-source voltage (VGS) range is ±8V.

  5. Is the IRF7410TRPBF-1 RoHS compliant?

    Yes, the IRF7410TRPBF-1 is RoHS compliant and halogen-free.

  6. What is the moisture sensitivity level of the IRF7410TRPBF-1?

    The moisture sensitivity level (MSL) is MSL1.

  7. What is the typical on-resistance at VGS = -4.5V?

    The typical on-resistance (RDS(on)) at VGS = -4.5V is 7 mΩ.

  8. What are the junction and storage temperature ranges?

    The junction and storage temperature ranges are -55°C to +150°C.

  9. Is the IRF7410TRPBF-1 suitable for industrial applications?

    Yes, it is qualified for industrial applications.

  10. What package type does the IRF7410TRPBF-1 come in?

    The IRF7410TRPBF-1 comes in a standard SO-8 package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7410TRPBF-1 IRF7413TRPBF-1 IRF7416TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 13A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA 3V @ 250µA 2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 79 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±8V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 1800 pF @ 25 V 1700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SO 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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