IRF7410TRPBF-1
  • Share:

Infineon Technologies IRF7410TRPBF-1

Manufacturer No:
IRF7410TRPBF-1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7410TRPBF-1 is a -12V single P-Channel HEXFET Power MOSFET manufactured by Infineon Technologies. This device is packaged in a standard SO-8 package, which is industry-standard and compatible with existing surface mount techniques. The MOSFET is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Min. Typ. Max. Units
VDS (Drain-Source Voltage) - - -12 V
ID @ TA = 25°C (Continuous Drain Current, VGS @ -4.5V) - - -16 A
ID @ TA = 70°C (Continuous Drain Current, VGS @ -4.5V) - - -13 A
IDM (Pulsed Drain Current) - - -65 A
PD @ TA = 25°C (Power Dissipation) - - 2.5 W
PD @ TA = 70°C (Power Dissipation) - - 1.6 W
VGS (Gate-to-Source Voltage) - - ±8 V
TJ, TSTG (Junction and Storage Temperature Range) -55 - +150 °C
RDS(on) max (@VGS = -4.5V) - - 7
RDS(on) max (@VGS = -2.5V) - - 9
RDS(on) max (@VGS = -1.8V) - - 13

Key Features

  • Industry-standard pinout SO-8 Package: Ensures multi-vendor compatibility and ease of integration with existing surface mount techniques.
  • RoHS Compliant, Halogen-Free: Environmentally friendlier and compliant with current environmental regulations.
  • MSL1, Industrial qualification: Increased reliability and suitability for industrial applications.
  • Low On-Resistance: RDS(on) as low as 7 mΩ at VGS = -4.5V, enhancing efficiency in power management.

Applications

The IRF7410TRPBF-1 is suitable for a variety of power management applications, including:

  • DC-DC Converters: Ideal for use in buck, boost, and buck-boost converters due to its low on-resistance and high current handling capabilities.
  • Power Supplies: Used in switching power supplies for efficient power delivery.
  • Motor Control: Suitable for motor control circuits requiring high current and low on-resistance.
  • General Power Switching: Can be used in various power switching applications where high reliability and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the IRF7410TRPBF-1?

    The maximum drain-source voltage (VDS) is -12V.

  2. What is the continuous drain current at 25°C with VGS = -4.5V?

    The continuous drain current (ID) at 25°C with VGS = -4.5V is -16A.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 2.5W.

  4. What is the gate-to-source voltage range?

    The gate-to-source voltage (VGS) range is ±8V.

  5. Is the IRF7410TRPBF-1 RoHS compliant?

    Yes, the IRF7410TRPBF-1 is RoHS compliant and halogen-free.

  6. What is the moisture sensitivity level of the IRF7410TRPBF-1?

    The moisture sensitivity level (MSL) is MSL1.

  7. What is the typical on-resistance at VGS = -4.5V?

    The typical on-resistance (RDS(on)) at VGS = -4.5V is 7 mΩ.

  8. What are the junction and storage temperature ranges?

    The junction and storage temperature ranges are -55°C to +150°C.

  9. Is the IRF7410TRPBF-1 suitable for industrial applications?

    Yes, it is qualified for industrial applications.

  10. What package type does the IRF7410TRPBF-1 come in?

    The IRF7410TRPBF-1 comes in a standard SO-8 package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
129

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IRF7410TRPBF-1 IRF7413TRPBF-1 IRF7416TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 13A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA 3V @ 250µA 2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 79 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±8V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 1800 pF @ 25 V 1700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SO 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCP5310E6327HTSA1
BCP5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
TLE62086G
TLE62086G
Infineon Technologies
BRUSH DC MOTOR CONTROLLER
BTS70302EPAXUMA1
BTS70302EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC