CSD17483F4T
  • Share:

Texas Instruments CSD17483F4T

Manufacturer No:
CSD17483F4T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.5A 3PICOSTAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17483F4T is a 30-V N-Channel FemtoFET™ MOSFET produced by Texas Instruments. This device is part of the NexFET™ power MOSFET family, designed to offer low on-resistance, low gate charge, and an ultra-small footprint, making it ideal for various handheld and mobile applications. The MOSFET features an integrated ESD protection diode and is RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±12 V
Continuous Drain Current (ID) 1.5 A
Pulsed Drain Current (IDM) 5 A
Power Dissipation (PD) 500 mW
On-State Resistance (RDS(on)) at VGS = 4.5V 200 mΩ
Threshold Voltage (VGS(th)) 0.85 V
Gate Charge Total (Qg) at VGS = 4.5V 1010 pC
Gate Charge Gate-to-Drain (Qgd) at VGS = 4.5V 130 pC
Junction-to-Ambient Thermal Resistance (RθJA) 90 °C/W
Operating Junction Temperature Range -55 to 150 °C

Key Features

  • Ultra-small footprint with a 0402 case size (1.0 mm x 0.6 mm x 0.35 mm)
  • Low on-resistance (RDS(on)) of 200 mΩ at VGS = 4.5V
  • Low gate charge (Qg) of 1010 pC and low gate-to-drain charge (Qgd) of 130 pC
  • Low threshold voltage (VGS(th)) of 0.85 V
  • Integrated ESD protection diode rated > 4 kV HBM and > 2 kV CDM
  • Lead and halogen-free, RoHS compliant
  • Ultra-low profile with a height of 0.35 mm

Applications

  • Optimized for load switch applications
  • General purpose switching applications
  • Single-cell battery applications
  • Handheld and mobile applications

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD17483F4T MOSFET?

    The maximum drain-to-source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance (RDS(on)) of the CSD17483F4T at VGS = 4.5V?

    The typical on-state resistance (RDS(on)) at VGS = 4.5V is 200 mΩ.

  3. What are the dimensions of the CSD17483F4T package?

    The package dimensions are 1.0 mm x 0.6 mm x 0.35 mm.

  4. Is the CSD17483F4T RoHS compliant?
  5. What is the maximum continuous drain current (ID) of the CSD17483F4T?

    The maximum continuous drain current (ID) is 1.5 A.

  6. What is the pulsed drain current (IDM) of the CSD17483F4T?

    The pulsed drain current (IDM) is 5 A.

  7. What is the power dissipation (PD) of the CSD17483F4T?

    The power dissipation (PD) is 500 mW.

  8. What is the threshold voltage (VGS(th)) of the CSD17483F4T?

    The threshold voltage (VGS(th)) is 0.85 V.

  9. Does the CSD17483F4T have integrated ESD protection? 4 kV HBM and > 2 kV CDM.

  10. What are some typical applications of the CSD17483F4T?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):12V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.97
16

Please send RFQ , we will respond immediately.

Same Series
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number CSD17483F4T CSD17484F4T CSD17483F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 3A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 8V 121mOhm @ 500mA, 8V 240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V 0.2 nC @ 8 V 1.3 nC @ 4.5 V
Vgs (Max) 12V 12V 12V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15 V 195 pF @ 15 V 190 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

Related Product By Categories

STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

MSC1211Y5PAGT
MSC1211Y5PAGT
Texas Instruments
IC ADC/DAC 1K 64TQFP
ADC12J4000NKE10
ADC12J4000NKE10
Texas Instruments
IC ADC 12BIT FOLD INTERP 68VQFN
DAC7724UB/1K
DAC7724UB/1K
Texas Instruments
IC DAC 12BIT V-OUT 28SOIC
TS3A44159PWR
TS3A44159PWR
Texas Instruments
IC SWITCH QUAD SPDT 16TSSOP
NE5532D
NE5532D
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8SOIC
TLV1391IDBVR
TLV1391IDBVR
Texas Instruments
IC DIFF COMPARATOR SNGL SOT23-5
LMC7221BIM5X/NOPB
LMC7221BIM5X/NOPB
Texas Instruments
IC COMPAR TNY CMOS RR IN SOT23-5
BQ24618RGER
BQ24618RGER
Texas Instruments
IC BATT CHG LI-ION 1-6CEL 24VQFN
TPS22965QWDSGTQ1
TPS22965QWDSGTQ1
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8WSON
LP2951ACN/NOPB
LP2951ACN/NOPB
Texas Instruments
IC REG LIN POS ADJ 100MA 8DIP
SN74AC14NS
SN74AC14NS
Texas Instruments
INVERTER, AC SERIES, 1-FUNC, 1-I
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC