Overview
The CSD17483F4T is a 30-V N-Channel FemtoFET™ MOSFET produced by Texas Instruments. This device is part of the NexFET™ power MOSFET family, designed to offer low on-resistance, low gate charge, and an ultra-small footprint, making it ideal for various handheld and mobile applications. The MOSFET features an integrated ESD protection diode and is RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
Parameter | Typical Value | Unit |
---|---|---|
Drain-to-Source Voltage (VDS) | 30 | V |
Gate-to-Source Voltage (VGS) | ±12 | V |
Continuous Drain Current (ID) | 1.5 | A |
Pulsed Drain Current (IDM) | 5 | A |
Power Dissipation (PD) | 500 | mW |
On-State Resistance (RDS(on)) at VGS = 4.5V | 200 | mΩ |
Threshold Voltage (VGS(th)) | 0.85 | V |
Gate Charge Total (Qg) at VGS = 4.5V | 1010 | pC |
Gate Charge Gate-to-Drain (Qgd) at VGS = 4.5V | 130 | pC |
Junction-to-Ambient Thermal Resistance (RθJA) | 90 | °C/W |
Operating Junction Temperature Range | -55 to 150 | °C |
Key Features
- Ultra-small footprint with a 0402 case size (1.0 mm x 0.6 mm x 0.35 mm)
- Low on-resistance (RDS(on)) of 200 mΩ at VGS = 4.5V
- Low gate charge (Qg) of 1010 pC and low gate-to-drain charge (Qgd) of 130 pC
- Low threshold voltage (VGS(th)) of 0.85 V
- Integrated ESD protection diode rated > 4 kV HBM and > 2 kV CDM
- Lead and halogen-free, RoHS compliant
- Ultra-low profile with a height of 0.35 mm
Applications
- Optimized for load switch applications
- General purpose switching applications
- Single-cell battery applications
- Handheld and mobile applications
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17483F4T MOSFET?
The maximum drain-to-source voltage (VDS) is 30 V.
- What is the typical on-state resistance (RDS(on)) of the CSD17483F4T at VGS = 4.5V?
The typical on-state resistance (RDS(on)) at VGS = 4.5V is 200 mΩ.
- What are the dimensions of the CSD17483F4T package?
The package dimensions are 1.0 mm x 0.6 mm x 0.35 mm.
- Is the CSD17483F4T RoHS compliant?
- What is the maximum continuous drain current (ID) of the CSD17483F4T?
The maximum continuous drain current (ID) is 1.5 A.
- What is the pulsed drain current (IDM) of the CSD17483F4T?
The pulsed drain current (IDM) is 5 A.
- What is the power dissipation (PD) of the CSD17483F4T?
The power dissipation (PD) is 500 mW.
- What is the threshold voltage (VGS(th)) of the CSD17483F4T?
The threshold voltage (VGS(th)) is 0.85 V.
- Does the CSD17483F4T have integrated ESD protection?
4 kV HBM and > 2 kV CDM. - What are some typical applications of the CSD17483F4T?