CSD17483F4T
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Texas Instruments CSD17483F4T

Manufacturer No:
CSD17483F4T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.5A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD17483F4T is a 30-V N-Channel FemtoFET™ MOSFET produced by Texas Instruments. This device is part of the NexFET™ power MOSFET family, designed to offer low on-resistance, low gate charge, and an ultra-small footprint, making it ideal for various handheld and mobile applications. The MOSFET features an integrated ESD protection diode and is RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±12 V
Continuous Drain Current (ID) 1.5 A
Pulsed Drain Current (IDM) 5 A
Power Dissipation (PD) 500 mW
On-State Resistance (RDS(on)) at VGS = 4.5V 200 mΩ
Threshold Voltage (VGS(th)) 0.85 V
Gate Charge Total (Qg) at VGS = 4.5V 1010 pC
Gate Charge Gate-to-Drain (Qgd) at VGS = 4.5V 130 pC
Junction-to-Ambient Thermal Resistance (RθJA) 90 °C/W
Operating Junction Temperature Range -55 to 150 °C

Key Features

  • Ultra-small footprint with a 0402 case size (1.0 mm x 0.6 mm x 0.35 mm)
  • Low on-resistance (RDS(on)) of 200 mΩ at VGS = 4.5V
  • Low gate charge (Qg) of 1010 pC and low gate-to-drain charge (Qgd) of 130 pC
  • Low threshold voltage (VGS(th)) of 0.85 V
  • Integrated ESD protection diode rated > 4 kV HBM and > 2 kV CDM
  • Lead and halogen-free, RoHS compliant
  • Ultra-low profile with a height of 0.35 mm

Applications

  • Optimized for load switch applications
  • General purpose switching applications
  • Single-cell battery applications
  • Handheld and mobile applications

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD17483F4T MOSFET?

    The maximum drain-to-source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance (RDS(on)) of the CSD17483F4T at VGS = 4.5V?

    The typical on-state resistance (RDS(on)) at VGS = 4.5V is 200 mΩ.

  3. What are the dimensions of the CSD17483F4T package?

    The package dimensions are 1.0 mm x 0.6 mm x 0.35 mm.

  4. Is the CSD17483F4T RoHS compliant?
  5. What is the maximum continuous drain current (ID) of the CSD17483F4T?

    The maximum continuous drain current (ID) is 1.5 A.

  6. What is the pulsed drain current (IDM) of the CSD17483F4T?

    The pulsed drain current (IDM) is 5 A.

  7. What is the power dissipation (PD) of the CSD17483F4T?

    The power dissipation (PD) is 500 mW.

  8. What is the threshold voltage (VGS(th)) of the CSD17483F4T?

    The threshold voltage (VGS(th)) is 0.85 V.

  9. Does the CSD17483F4T have integrated ESD protection? 4 kV HBM and > 2 kV CDM.

  10. What are some typical applications of the CSD17483F4T?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):12V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD17483F4T CSD17484F4T CSD17483F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 3A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 8V 121mOhm @ 500mA, 8V 240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V 0.2 nC @ 8 V 1.3 nC @ 4.5 V
Vgs (Max) 12V 12V 12V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15 V 195 pF @ 15 V 190 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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