Overview
The CSD17484F4T is a 30-V N-Channel FemtoFET MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high efficiency. The CSD17484F4T is packaged in a Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) and is suitable for a wide range of applications, including power management, battery management, and general-purpose switching.
Key Specifications
| Parameter | Test Conditions | Min | |||
|---|---|---|---|---|---|
| Drain-to-Source Voltage (VDS) | VGS = 0 V, IDS = 250 μA | 30 | 30 | V | |
| Gate-to-Source Voltage (VGS) | 12 | V | |||
| Continuous Drain Current (ID) | 3.0 | A | |||
| Pulsed Drain Current (IDM) | Pulse duration ≤ 100 μs, duty cycle ≤ 1% | 18 | A | ||
| Threshold Voltage (VGS(th)) | VDS = VGS, IDS = 250 μA | 0.65 | 0.85 | 1.10 | V |
| On-State Resistance (RDS(on)) @ VGS = 1.8 V | IDS = 0.5 A | 170 | 270 | mΩ | |
| On-State Resistance (RDS(on)) @ VGS = 2.5 V | IDS = 0.5 A | 125 | 160 | mΩ | |
| On-State Resistance (RDS(on)) @ VGS = 4.5 V | IDS = 0.5 A | 107 | 128 | mΩ | |
| On-State Resistance (RDS(on)) @ VGS = 8 V | IDS = 0.5 A | 99 | 121 | mΩ | |
| Junction-to-Ambient Thermal Resistance (RθJA) | Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. | 85 | °C/W |
Key Features
- Low on-state resistance (RDS(on)) for high efficiency.
- High continuous drain current (ID) of up to 3.0 A.
- Pulsed drain current (IDM) of up to 18 A.
- Low threshold voltage (VGS(th)) range of 0.65 V to 1.10 V.
- High operating junction and storage temperature range of –55°C to 150°C.
- Low gate charge and fast switching times.
- Compact Femto (0402) package for space-saving designs.
Applications
- Power management systems.
- Battery management systems.
- General-purpose switching.
- DC-DC converters.
- Load switching and control.
- Low-voltage motor control.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17484F4T?
The maximum drain-to-source voltage (VDS) is 30 V. - What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V?
The typical on-state resistance (RDS(on)) at VGS = 4.5 V is 107 mΩ. - What is the continuous drain current (ID) rating of the CSD17484F4T?
The continuous drain current (ID) rating is up to 3.0 A. - What is the pulsed drain current (IDM) rating of the CSD17484F4T?
The pulsed drain current (IDM) rating is up to 18 A for pulse durations ≤ 100 μs and duty cycle ≤ 1%. - What is the threshold voltage (VGS(th)) range of the CSD17484F4T?
The threshold voltage (VGS(th)) range is from 0.65 V to 1.10 V. - What is the junction-to-ambient thermal resistance (RθJA) of the CSD17484F4T?
The junction-to-ambient thermal resistance (RθJA) is typically 85 °C/W when mounted on a 1-in2 (6.45-cm2) FR4 material with a 2-oz (0.071-mm) thick Cu pad. - What package type is the CSD17484F4T available in?
The CSD17484F4T is available in a Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) package. - What are some common applications for the CSD17484F4T?
Common applications include power management, battery management, general-purpose switching, DC-DC converters, load switching and control, and low-voltage motor control. - What is the operating junction and storage temperature range of the CSD17484F4T?
The operating junction and storage temperature range is from –55°C to 150°C. - How can I ensure proper thermal management for the CSD17484F4T?
Proper thermal management can be ensured by following the recommended PCB layout and using a sufficient copper area as specified in the datasheet.
