Overview
The STF19NF20 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of STMicroelectronics' medium-voltage power MOSFET portfolio, designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology enhances the device's performance, making it comparable to or even surpassing standard parts from other manufacturers. The STF19NF20 is available in the TO-220FP package and is suitable for a wide range of industrial and automotive applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 200 | V |
Gate-Source Voltage (VGS) | ±20 | V |
Drain Current (ID) - Continuous at TC = 25°C | 15 | A |
Drain Current (ID) - Continuous at TC = 100°C | 9.45 | A |
On-Resistance (RDS(on)) | < 0.16 | Ω |
Power Dissipation (Pw) | 25 | W |
Package | TO-220FP | |
Reverse Recovery Time (trr) | 125 | ns |
Reverse Recovery Charge (Qrr) | 0.55 | µC |
Reverse Recovery Current (IRRM) | 8.8 | A |
Key Features
- Extremely high dv/dt capability, making it suitable for high-frequency switching applications.
- Minimized gate charge, which reduces switching losses and improves efficiency.
- Very low intrinsic capacitances, enhancing the device's switching performance.
- Utilizes STMicroelectronics' MESH OVERLAY™ process, ensuring high performance and reliability.
- Zener-protected and 100% avalanche tested, providing robustness against transient conditions.
Applications
- Switching applications, including DC-DC converters and power supplies.
- Flyback converters and other high-frequency power conversion circuits.
- LED lighting systems, where high efficiency and reliability are crucial.
- Industrial and automotive systems requiring high-performance power MOSFETs.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF19NF20?
The maximum drain-source voltage (VDS) of the STF19NF20 is 200 V.
- What is the typical on-resistance (RDS(on)) of the STF19NF20?
The typical on-resistance (RDS(on)) of the STF19NF20 is less than 0.16 Ω.
- What is the continuous drain current (ID) at TC = 25°C for the STF19NF20?
The continuous drain current (ID) at TC = 25°C for the STF19NF20 is 15 A.
- In which package is the STF19NF20 available?
The STF19NF20 is available in the TO-220FP package.
- What are the key features of the STF19NF20?
The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and utilization of STMicroelectronics' MESH OVERLAY™ process.
- What are some common applications of the STF19NF20?
Common applications include switching applications, flyback converters, LED lighting systems, and industrial and automotive systems.
- What is the reverse recovery time (trr) of the STF19NF20?
The reverse recovery time (trr) of the STF19NF20 is 125 ns.
- Is the STF19NF20 Zener-protected and avalanche tested?
Yes, the STF19NF20 is Zener-protected and 100% avalanche tested.
- What is the maximum gate-source voltage (VGS) for the STF19NF20?
The maximum gate-source voltage (VGS) for the STF19NF20 is ±20 V.
- What is the forward on voltage (VSD) of the STF19NF20?
The forward on voltage (VSD) of the STF19NF20 is 1.6 V when ISD = 15 A and VGS = 0 V.