STF19NF20
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STMicroelectronics STF19NF20

Manufacturer No:
STF19NF20
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 200V 15A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF19NF20 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of STMicroelectronics' medium-voltage power MOSFET portfolio, designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology enhances the device's performance, making it comparable to or even surpassing standard parts from other manufacturers. The STF19NF20 is available in the TO-220FP package and is suitable for a wide range of industrial and automotive applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 200 V
Gate-Source Voltage (VGS) ±20 V
Drain Current (ID) - Continuous at TC = 25°C 15 A
Drain Current (ID) - Continuous at TC = 100°C 9.45 A
On-Resistance (RDS(on)) < 0.16 Ω
Power Dissipation (Pw) 25 W
Package TO-220FP
Reverse Recovery Time (trr) 125 ns
Reverse Recovery Charge (Qrr) 0.55 µC
Reverse Recovery Current (IRRM) 8.8 A

Key Features

  • Extremely high dv/dt capability, making it suitable for high-frequency switching applications.
  • Minimized gate charge, which reduces switching losses and improves efficiency.
  • Very low intrinsic capacitances, enhancing the device's switching performance.
  • Utilizes STMicroelectronics' MESH OVERLAY™ process, ensuring high performance and reliability.
  • Zener-protected and 100% avalanche tested, providing robustness against transient conditions.

Applications

  • Switching applications, including DC-DC converters and power supplies.
  • Flyback converters and other high-frequency power conversion circuits.
  • LED lighting systems, where high efficiency and reliability are crucial.
  • Industrial and automotive systems requiring high-performance power MOSFETs.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF19NF20?

    The maximum drain-source voltage (VDS) of the STF19NF20 is 200 V.

  2. What is the typical on-resistance (RDS(on)) of the STF19NF20?

    The typical on-resistance (RDS(on)) of the STF19NF20 is less than 0.16 Ω.

  3. What is the continuous drain current (ID) at TC = 25°C for the STF19NF20?

    The continuous drain current (ID) at TC = 25°C for the STF19NF20 is 15 A.

  4. In which package is the STF19NF20 available?

    The STF19NF20 is available in the TO-220FP package.

  5. What are the key features of the STF19NF20?

    The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and utilization of STMicroelectronics' MESH OVERLAY™ process.

  6. What are some common applications of the STF19NF20?

    Common applications include switching applications, flyback converters, LED lighting systems, and industrial and automotive systems.

  7. What is the reverse recovery time (trr) of the STF19NF20?

    The reverse recovery time (trr) of the STF19NF20 is 125 ns.

  8. Is the STF19NF20 Zener-protected and avalanche tested?

    Yes, the STF19NF20 is Zener-protected and 100% avalanche tested.

  9. What is the maximum gate-source voltage (VGS) for the STF19NF20?

    The maximum gate-source voltage (VGS) for the STF19NF20 is ±20 V.

  10. What is the forward on voltage (VSD) of the STF19NF20?

    The forward on voltage (VSD) of the STF19NF20 is 1.6 V when ISD = 15 A and VGS = 0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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