Overview
The STB19NF20 is a high-performance N-channel Power MOSFET designed by STMicroelectronics. It is part of the STPOWER family and utilizes the company's consolidated strip layout-based MESH OVERLAY™ process. This technology enhances the device's performance, making it comparable to or even surpassing standard parts from other manufacturers. The STB19NF20 is available in the D2PAK package and is suitable for various high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 200 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 15 | A |
| Continuous Drain Current (ID) at TC = 100°C | 9.45 | A |
| Pulsed Drain Current (IDM) | 60 | A |
| On-Resistance (RDS(on)) | 0.16 Ω (max.) | Ω |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 200 | V |
| Gate Threshold Voltage (VGS(th)) | - | V |
| Package | D2PAK | - |
Key Features
- Extremely high dv/dt capability, making it suitable for high-frequency switching applications.
- Minimized gate charge, which reduces switching losses and improves efficiency.
- Very low intrinsic capacitances, enhancing the device's switching performance.
- High drain current capability of up to 15 A at 25°C and 9.45 A at 100°C.
- Low on-resistance (RDS(on)) of 0.16 Ω (max.), reducing power losses.
Applications
The STB19NF20 is primarily used in switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB19NF20?
The maximum drain-source voltage (VDS) is 200 V.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 15 A.
- What is the typical on-resistance (RDS(on)) of the STB19NF20?
The typical on-resistance (RDS(on)) is 0.16 Ω.
- What package is the STB19NF20 available in?
The STB19NF20 is available in the D2PAK package.
- What are the key features of the STB19NF20?
The key features include extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances.
- What are the primary applications of the STB19NF20?
The primary applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
- What is the maximum gate-source voltage (VGS) for the STB19NF20?
The maximum gate-source voltage (VGS) is ±20 V.
- What is the reverse recovery time (trr) of the STB19NF20?
The reverse recovery time (trr) is approximately 125 ns.
- What is the single pulse avalanche energy (EAS) of the STB19NF20?
The single pulse avalanche energy (EAS) is 110 mJ.
- Is the STB19NF20 available in environmentally compliant packages?
