Overview
The STL260N4F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is designed to offer very low on-state resistance and excellent figure of merit (FoM), making it ideal for high-power applications. The MOSFET features an enhanced trench gate structure, which contributes to its superior electrical characteristics and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| RDS(on) (On-State Resistance) | 0.9 mΩ (typ.) |
| ID (Drain Current) | 120 A |
| VGS(th) (Threshold Voltage) | 2-4 V |
| Ptot (Total Power Dissipation) | Dependent on package and thermal conditions |
| Package | PowerFLAT 5x6 |
Key Features
- Among the lowest RDS(on) on the market, ensuring minimal power loss.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness for enhanced reliability.
- Very low gate charge, reducing switching losses.
Applications
- High-power DC-DC converters and power supplies.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- Automotive and industrial power management systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the STL260N4F7?
The maximum drain-source voltage (VDS) is 40 V. - What is the typical on-state resistance of the STL260N4F7?
The typical on-state resistance (RDS(on)) is 0.9 mΩ. - What is the maximum drain current of the STL260N4F7?
The maximum drain current (ID) is 120 A. - What package is the STL260N4F7 available in?
The STL260N4F7 is available in the PowerFLAT 5x6 package. - What are the key features of the STL260N4F7?
The key features include very low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness. - What are some typical applications of the STL260N4F7?
Typical applications include high-power DC-DC converters, motor control systems, PFC circuits, automotive and industrial power management, and renewable energy systems. - How does the STripFET F7 technology benefit the STL260N4F7?
The STripFET F7 technology enhances the trench gate structure, leading to very low on-state resistance and excellent electrical characteristics. - What is the significance of the low Crss/Ciss ratio in the STL260N4F7?
The low Crss/Ciss ratio improves EMI immunity, making the device more reliable in noisy environments. - How does the high avalanche ruggedness of the STL260N4F7 contribute to its reliability?
The high avalanche ruggedness enhances the device's ability to withstand voltage spikes and other transient conditions, increasing its overall reliability. - Can the STL260N4F7 be used in automotive applications?
Yes, the STL260N4F7 can be used in automotive applications due to its robust design and compliance with automotive-grade standards.
