FQT4N20LTF
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onsemi FQT4N20LTF

Manufacturer No:
FQT4N20LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 850MA SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The FQT4N20LTF is an N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is a dual-protected, low-side smart, discrete MOSFET that features temperature and current limit protections. It is a standard 40V gate level power MOSFET with leading on-resistance, making it particularly suitable for motor driver applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)200 V
Continuous Drain Current (Id)850 mA
Power Dissipation (Pd)2.2 W
On-Resistance (Rds(on))1.35 Ω @ 10 V, 425 mA
Threshold Voltage (Vth)2 V @ 250 μA
Package TypeSOT-223-3

Key Features

  • Dual protection with temperature and current limit
  • Low on-resistance for efficient operation
  • Standard 40V gate level
  • SOT-223-3 package for surface mount applications
  • ROHS compliant

Applications

The FQT4N20LTF is primarily used in motor driver applications due to its high performance and protective features. It is also suitable for other high-power switching applications where reliability and efficiency are crucial.

Q & A

  1. What is the voltage rating of the FQT4N20LTF MOSFET?
    The voltage rating of the FQT4N20LTF MOSFET is 200 V.
  2. What is the continuous drain current of the FQT4N20LTF?
    The continuous drain current of the FQT4N20LTF is 850 mA.
  3. What is the power dissipation of the FQT4N20LTF?
    The power dissipation of the FQT4N20LTF is 2.2 W.
  4. What is the on-resistance of the FQT4N20LTF?
    The on-resistance of the FQT4N20LTF is 1.35 Ω @ 10 V, 425 mA.
  5. What is the threshold voltage of the FQT4N20LTF?
    The threshold voltage of the FQT4N20LTF is 2 V @ 250 μA.
  6. What package type does the FQT4N20LTF use?
    The FQT4N20LTF uses the SOT-223-3 package.
  7. Is the FQT4N20LTF ROHS compliant?
    Yes, the FQT4N20LTF is ROHS compliant.
  8. What are the primary applications of the FQT4N20LTF?
    The primary applications of the FQT4N20LTF include motor driver applications and other high-power switching applications.
  9. What protective features does the FQT4N20LTF have?
    The FQT4N20LTF has dual protection with temperature and current limit.
  10. Why is the FQT4N20LTF suitable for motor driver applications?
    The FQT4N20LTF is suitable for motor driver applications due to its low on-resistance and protective features.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FQT4N20LTF FQT4N20TF
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc) 850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 425mA, 10V 1.4Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 5 V 6.5 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.2W (Tc) 2.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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