FQT4N20LTF
  • Share:

onsemi FQT4N20LTF

Manufacturer No:
FQT4N20LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 850MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQT4N20LTF is an N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is a dual-protected, low-side smart, discrete MOSFET that features temperature and current limit protections. It is a standard 40V gate level power MOSFET with leading on-resistance, making it particularly suitable for motor driver applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)200 V
Continuous Drain Current (Id)850 mA
Power Dissipation (Pd)2.2 W
On-Resistance (Rds(on))1.35 Ω @ 10 V, 425 mA
Threshold Voltage (Vth)2 V @ 250 μA
Package TypeSOT-223-3

Key Features

  • Dual protection with temperature and current limit
  • Low on-resistance for efficient operation
  • Standard 40V gate level
  • SOT-223-3 package for surface mount applications
  • ROHS compliant

Applications

The FQT4N20LTF is primarily used in motor driver applications due to its high performance and protective features. It is also suitable for other high-power switching applications where reliability and efficiency are crucial.

Q & A

  1. What is the voltage rating of the FQT4N20LTF MOSFET?
    The voltage rating of the FQT4N20LTF MOSFET is 200 V.
  2. What is the continuous drain current of the FQT4N20LTF?
    The continuous drain current of the FQT4N20LTF is 850 mA.
  3. What is the power dissipation of the FQT4N20LTF?
    The power dissipation of the FQT4N20LTF is 2.2 W.
  4. What is the on-resistance of the FQT4N20LTF?
    The on-resistance of the FQT4N20LTF is 1.35 Ω @ 10 V, 425 mA.
  5. What is the threshold voltage of the FQT4N20LTF?
    The threshold voltage of the FQT4N20LTF is 2 V @ 250 μA.
  6. What package type does the FQT4N20LTF use?
    The FQT4N20LTF uses the SOT-223-3 package.
  7. Is the FQT4N20LTF ROHS compliant?
    Yes, the FQT4N20LTF is ROHS compliant.
  8. What are the primary applications of the FQT4N20LTF?
    The primary applications of the FQT4N20LTF include motor driver applications and other high-power switching applications.
  9. What protective features does the FQT4N20LTF have?
    The FQT4N20LTF has dual protection with temperature and current limit.
  10. Why is the FQT4N20LTF suitable for motor driver applications?
    The FQT4N20LTF is suitable for motor driver applications due to its low on-resistance and protective features.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.64
868

Please send RFQ , we will respond immediately.

Same Series
NZT751
NZT751
TRANS PNP 60V 4A SOT223-4
PZTA42
PZTA42
TRANS NPN 300V 0.5A SOT223
FQT4N20LTF
FQT4N20LTF
MOSFET N-CH 200V 850MA SOT223-4
FQT1N80TF-WS
FQT1N80TF-WS
MOSFET N-CH 800V 200MA SOT223-3
IRLM110ATF
IRLM110ATF
MOSFET N-CH 100V 1.5A SOT223-4

Similar Products

Part Number FQT4N20LTF FQT4N20TF
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc) 850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 425mA, 10V 1.4Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 5 V 6.5 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.2W (Tc) 2.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC