Overview
The STH310N10F7-6 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-resistance and enhanced switching efficiency, making it ideal for high-power applications. The MOSFET features an enhanced trench gate structure that reduces internal capacitance and gate charge, enabling faster and more efficient switching operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STH310N10F7-6 | |
| VDS (Drain-Source Voltage) | 100 | V |
| RDS(on) (On-Resistance) | 2.3 mΩ (max.), 1.9 mΩ (typ.) | mΩ |
| ID (Drain Current) | 180 A (continuous at TC = 25°C) | A |
| IDM (Drain Current, Pulsed) | 720 A | A |
| VGS (Gate-Source Voltage) | ± 20 | V |
| Tj (Operating Junction Temperature) | -55 to 175 | °C |
| PTOT (Total Dissipation at TC = 25°C) | 315 W | W |
| Rthj-case (Thermal Resistance Junction-Case) | 0.48 | °C/W |
| Package | H2PAK-6 |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 1.9 mΩ.
- Excellent figure of merit (FoM) for high efficiency in switching applications.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness, ensuring robust performance under various operating conditions.
- Enhanced trench gate structure reducing internal capacitance and gate charge for faster switching.
Applications
- Switching applications, including power supplies, motor drives, and high-power electronic systems.
- High-frequency switching circuits where low on-resistance and fast switching times are critical.
- Aerospace and automotive systems requiring high reliability and performance.
Q & A
- What is the typical on-resistance of the STH310N10F7-6 MOSFET?
The typical on-resistance (RDS(on)) is 1.9 mΩ.
- What is the maximum continuous drain current for the STH310N10F7-6 at TC = 25°C?
The maximum continuous drain current (ID) is 180 A.
- What is the maximum pulsed drain current for the STH310N10F7-6?
The maximum pulsed drain current (IDM) is 720 A.
- What is the operating junction temperature range for the STH310N10F7-6?
The operating junction temperature range is -55 to 175 °C.
- What package type is the STH310N10F7-6 available in?
The STH310N10F7-6 is available in the H2PAK-6 package.
- What are the key features of the STripFET™ F7 technology used in the STH310N10F7-6?
The STripFET™ F7 technology features very low on-resistance, reduced internal capacitance, and enhanced switching efficiency.
- What are some typical applications for the STH310N10F7-6 MOSFET?
Typical applications include switching power supplies, motor drives, and other high-power electronic systems.
- What is the thermal resistance junction-case (Rthj-case) for the STH310N10F7-6?
The thermal resistance junction-case (Rthj-case) is 0.48 °C/W.
- How does the STH310N10F7-6 improve EMI immunity?
The STH310N10F7-6 improves EMI immunity through a low Crss/Ciss ratio.
- What is the reverse recovery time (trr) for the STH310N10F7-6?
The reverse recovery time (trr) is approximately 85 ns.
