Overview
The STH310N10F7-2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-resistance and reduced switching losses, making it highly efficient for various power management applications.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 100 V |
| ID (Drain Current) | 180 A (Tc) |
| PD (Power Dissipation) | 315 W (Tc) |
| RDS(on) (On-Resistance) | 1.9 mΩ (typ.) |
| Package | H2PAK-2 (Surface Mount) |
Key Features
- Low on-resistance (RDS(on)) of 1.9 mΩ (typ.)
- High drain current (ID) of 180 A (Tc)
- High power dissipation (PD) of 315 W (Tc)
- Enhanced trench gate structure using STripFET™ F7 technology
- Surface mount H2PAK-2 package for easy integration
Applications
- Power supplies and DC-DC converters
- Motor control and drives
- Automotive systems (e.g., electric vehicles, hybrid vehicles)
- Industrial power systems and control
- Renewable energy systems (e.g., solar, wind power)
Q & A
- What is the maximum drain-source voltage of the STH310N10F7-2?
The maximum drain-source voltage is 100 V. - What is the typical on-resistance of the STH310N10F7-2?
The typical on-resistance is 1.9 mΩ. - What is the maximum drain current of the STH310N10F7-2?
The maximum drain current is 180 A (Tc). - What package type is the STH310N10F7-2 available in?
The STH310N10F7-2 is available in the H2PAK-2 surface mount package. - What technology does the STH310N10F7-2 use?
The STH310N10F7-2 uses the STripFET™ F7 technology. - What are some common applications for the STH310N10F7-2?
Common applications include power supplies, motor control, automotive systems, industrial power systems, and renewable energy systems. - What is the power dissipation capability of the STH310N10F7-2?
The power dissipation capability is 315 W (Tc). - Is the STH310N10F7-2 suitable for high-frequency switching applications?
Yes, due to its low on-resistance and reduced switching losses, it is suitable for high-frequency switching applications. - Where can I find detailed specifications for the STH310N10F7-2?
Detailed specifications can be found on the STMicroelectronics website, DigiKey, and other authorized distributors. - What are the benefits of using the STripFET™ F7 technology in the STH310N10F7-2?
The benefits include very low on-resistance and reduced switching losses, leading to higher efficiency and performance.
