STH315N10F7-2
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STMicroelectronics STH315N10F7-2

Manufacturer No:
STH315N10F7-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A H2PAK-2
Delivery:
Payment:
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Product Introduction

Overview

The STH315N10F7-2 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET F7 series, known for its high performance and reliability in demanding automotive applications. The STH315N10F7-2 is housed in an H2PAK-2 package, which offers excellent thermal management and mechanical robustness.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-Resistance) 2.1 mΩ (typ.)
ID (Drain Current) 180 A
TJ (Junction Temperature) -55°C to 175°C
Package H2PAK-2
Qualification AEC-Q101
Power Dissipation (Max) 315 W (Tc)

Key Features

  • High current capability: Up to 180 A drain current.
  • Low on-resistance: 2.1 mΩ (typ.) for efficient power handling.
  • Wide operating temperature range: -55°C to 175°C (TJ).
  • AEC-Q101 qualified for automotive applications.
  • H2PAK-2 package for excellent thermal and mechanical performance.

Applications

  • Automotive systems: Suitable for various automotive applications such as power steering, power windows, and other high-current systems.
  • Industrial power supplies: Can be used in high-power industrial applications requiring reliable and efficient power management.
  • Motor control: Ideal for motor control systems due to its high current handling and low on-resistance.

Q & A

  1. What is the maximum drain-source voltage of the STH315N10F7-2?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-resistance of the STH315N10F7-2?

    The typical on-resistance (RDS(on)) is 2.1 mΩ.

  3. What is the maximum drain current of the STH315N10F7-2?

    The maximum drain current (ID) is 180 A.

  4. What is the operating temperature range of the STH315N10F7-2?

    The operating temperature range is -55°C to 175°C (TJ).

  5. What package type is used for the STH315N10F7-2?

    The device is housed in an H2PAK-2 package.

  6. Is the STH315N10F7-2 qualified for automotive applications?

    Yes, it is AEC-Q101 qualified for automotive applications.

  7. What is the maximum power dissipation of the STH315N10F7-2?

    The maximum power dissipation is 315 W (Tc).

  8. What are some common applications for the STH315N10F7-2?

    Common applications include automotive systems, industrial power supplies, and motor control systems.

  9. Why is the STH315N10F7-2 suitable for high-current applications?

    It is suitable due to its high current capability and low on-resistance.

  10. What are the benefits of using the H2PAK-2 package?

    The H2PAK-2 package offers excellent thermal and mechanical performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STH315N10F7-2
STH315N10F7-2
MOSFET N-CH 100V 180A H2PAK-2

Similar Products

Part Number STH315N10F7-2 STH315N10F7-6 STH310N10F7-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V 2.3mOhm @ 60A, 10V 2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V 12800 pF @ 25 V 12800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 315W (Tc) 315W (Tc) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2PAK-6 H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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