STD45N10F7
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STMicroelectronics STD45N10F7

Manufacturer No:
STD45N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 45A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD45N10F7 is a high-performance N-channel power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, making the MOSFET highly efficient for various power management applications. The device is packaged in a TO-252-2 (DPAK) surface mount format, which is suitable for a wide range of power electronics designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Current Rating (Id)45 A
On-State Resistance (Rds(on))14.5 mΩ (typ.) at Vgs = 10 V, Id = 22.5 A
Power Dissipation (Pd)60 W
Package TypeTO-252-2 (DPAK)
Gate Threshold Voltage (Vth)4.5 V

Key Features

  • Low on-state resistance due to STripFET™ F7 technology, enhancing efficiency and reducing power losses.
  • High current and voltage ratings, making it suitable for high-power applications.
  • Compact TO-252-2 (DPAK) package, ideal for space-constrained designs.
  • Enhanced trench gate structure for improved performance and reliability.

Applications

The STD45N10F7 is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power steering.
  • Industrial power management systems.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the voltage rating of the STD45N10F7 MOSFET?
    The voltage rating of the STD45N10F7 MOSFET is 100 V.
  2. What is the current rating of the STD45N10F7 MOSFET?
    The current rating of the STD45N10F7 MOSFET is 45 A.
  3. What is the typical on-state resistance of the STD45N10F7 MOSFET?
    The typical on-state resistance of the STD45N10F7 MOSFET is 14.5 mΩ at Vgs = 10 V, Id = 22.5 A.
  4. What package type is the STD45N10F7 MOSFET available in?
    The STD45N10F7 MOSFET is available in the TO-252-2 (DPAK) package.
  5. What is the gate threshold voltage of the STD45N10F7 MOSFET?
    The gate threshold voltage of the STD45N10F7 MOSFET is 4.5 V.
  6. What technology does the STD45N10F7 MOSFET use?
    The STD45N10F7 MOSFET uses the STripFET™ F7 technology.
  7. What are some common applications of the STD45N10F7 MOSFET?
    The STD45N10F7 MOSFET is commonly used in power supplies, motor control systems, automotive electronics, industrial power management, and consumer electronics.
  8. Is the STD45N10F7 MOSFET RoHS compliant?
    Yes, the STD45N10F7 MOSFET is RoHS compliant.
  9. Where can I purchase the STD45N10F7 MOSFET?
    The STD45N10F7 MOSFET can be purchased from various distributors such as Digi-Key, STMicroelectronics' online store, and other authorized suppliers.
  10. What is the power dissipation rating of the STD45N10F7 MOSFET?
    The power dissipation rating of the STD45N10F7 MOSFET is 60 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STI45N10F7
STI45N10F7
MOSFET N-CH 100V 45A I2PAK
STD45N10F7
STD45N10F7
MOSFET N-CH 100V 45A DPAK

Similar Products

Part Number STD45N10F7 STD25N10F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 22.5A, 10V 35mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 50 V 920 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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