CSD17318Q2T
  • Share:

Texas Instruments CSD17318Q2T

Manufacturer No:
CSD17318Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 30V 25A 6WSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17318Q2T is a single N-channel NexFET™ power MOSFET produced by Texas Instruments (TI). This component is designed for high-efficiency power management applications and is housed in a compact 2mm x 2mm SON package. It is particularly suitable for use in portable electronics, automotive systems, and industrial applications due to its low on-resistance and high voltage handling capabilities. The CSD17318Q2T stands out for its excellent thermal performance and reliability, making it a competitive choice for designers seeking to optimize power efficiency in space-constrained designs.

Key Specifications

ParameterValueUnitNotes
PackageSON-2mm x 2mm
Drain-Source Voltage (VDS)30V-
On-Resistance (RDS(on))16.9-
Gate Charge (Qg)Not specifiednC-
Operating Temperature-40 to 125°C-
Package Quantity3,000-Large T&R

Key Features

  • Low on-resistance (16.9mΩ) for high efficiency.
  • Compact 2mm x 2mm SON package for space-constrained designs.
  • High drain-source voltage rating of 30V for robust performance.
  • Excellent thermal performance for reliable operation in demanding environments.

Applications

The CSD17318Q2T is widely used in various applications, including:

  • Portable Electronics: Optimizes power efficiency in smartphones, tablets, and wearable devices.
  • Automotive Systems: Enhances performance in power management modules and motor control systems.
  • Industrial Applications: Provides reliable power switching in automation and control systems.

Q & A

1. What is the package type of the CSD17318Q2T?

The CSD17318Q2T comes in a 2mm x 2mm SON package.

2. What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage is 30V.

3. What is the typical on-resistance of the CSD17318Q2T?

The typical on-resistance is 16.9mΩ.

4. What is the operating temperature range?

The operating temperature range is -40°C to 125°C.

5. Is this MOSFET suitable for automotive applications?

Yes, the CSD17318Q2T is suitable for automotive systems due to its robust performance and reliability.

6. How does the compact package benefit the design?

The 2mm x 2mm SON package is ideal for space-constrained designs, allowing for high-density PCB layouts.

7. What is the gate charge of this MOSFET?

The gate charge is not specified in the available data.

8. Can this MOSFET handle high currents?

Yes, its low on-resistance enables it to handle high currents efficiently.

9. What is the package quantity for bulk orders?

The package quantity is 3,000 units in a large tape and reel (T&R).

10. Is the CSD17318Q2T suitable for industrial applications?

Yes, it is well-suited for industrial power management and control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:879 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$1.13
219

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD17318Q2T CSD17313Q2T CSD17318Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 5A (Ta) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 3V, 8V 2.5V, 8V
Rds On (Max) @ Id, Vgs 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V 15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.8V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 2.7 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±10V +10V, -8V ±10V
Input Capacitance (Ciss) (Max) @ Vds 879 pF @ 15 V 340 pF @ 15 V 879 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 16W (Tc) 2.4W (Ta), 17W (Tc) 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

ADC128S022CIMT/NOPB
ADC128S022CIMT/NOPB
Texas Instruments
IC ADC 12BIT SAR 16TSSOP
ADS8342IPFBTG4
ADS8342IPFBTG4
Texas Instruments
IC ADC 16BIT SAR 48TQFP
ADC12J4000NKE10
ADC12J4000NKE10
Texas Instruments
IC ADC 12BIT FOLD INTERP 68VQFN
DAC8568IDPWR
DAC8568IDPWR
Texas Instruments
IC DAC 16BIT V-OUT 16TSSOP
SN65LVDM176DGKG4
SN65LVDM176DGKG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 8VSSOP
SA5532DR
SA5532DR
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8SOIC
LM3658SDX-A
LM3658SDX-A
Texas Instruments
IC BATT CHG LI-ION 1CELL 10WSON
LM5109ASD/NOPB
LM5109ASD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8WSON
TL5001CPSR/1
TL5001CPSR/1
Texas Instruments
IC REG CTRLR BCK/BOOST/FLYBK 8SO
TPS79901DRVR
TPS79901DRVR
Texas Instruments
IC REG LIN POS ADJ 200MA 6WSON
TPS73625DBVR
TPS73625DBVR
Texas Instruments
IC REG LINEAR 2.5V 400MA SOT23-5
TPS73625DBVRG4
TPS73625DBVRG4
Texas Instruments
IC REG LINEAR 2.5V 400MA SOT23-5