CSD17318Q2T
  • Share:

Texas Instruments CSD17318Q2T

Manufacturer No:
CSD17318Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 30V 25A 6WSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17318Q2T is a single N-channel NexFET™ power MOSFET produced by Texas Instruments (TI). This component is designed for high-efficiency power management applications and is housed in a compact 2mm x 2mm SON package. It is particularly suitable for use in portable electronics, automotive systems, and industrial applications due to its low on-resistance and high voltage handling capabilities. The CSD17318Q2T stands out for its excellent thermal performance and reliability, making it a competitive choice for designers seeking to optimize power efficiency in space-constrained designs.

Key Specifications

ParameterValueUnitNotes
PackageSON-2mm x 2mm
Drain-Source Voltage (VDS)30V-
On-Resistance (RDS(on))16.9-
Gate Charge (Qg)Not specifiednC-
Operating Temperature-40 to 125°C-
Package Quantity3,000-Large T&R

Key Features

  • Low on-resistance (16.9mΩ) for high efficiency.
  • Compact 2mm x 2mm SON package for space-constrained designs.
  • High drain-source voltage rating of 30V for robust performance.
  • Excellent thermal performance for reliable operation in demanding environments.

Applications

The CSD17318Q2T is widely used in various applications, including:

  • Portable Electronics: Optimizes power efficiency in smartphones, tablets, and wearable devices.
  • Automotive Systems: Enhances performance in power management modules and motor control systems.
  • Industrial Applications: Provides reliable power switching in automation and control systems.

Q & A

1. What is the package type of the CSD17318Q2T?

The CSD17318Q2T comes in a 2mm x 2mm SON package.

2. What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage is 30V.

3. What is the typical on-resistance of the CSD17318Q2T?

The typical on-resistance is 16.9mΩ.

4. What is the operating temperature range?

The operating temperature range is -40°C to 125°C.

5. Is this MOSFET suitable for automotive applications?

Yes, the CSD17318Q2T is suitable for automotive systems due to its robust performance and reliability.

6. How does the compact package benefit the design?

The 2mm x 2mm SON package is ideal for space-constrained designs, allowing for high-density PCB layouts.

7. What is the gate charge of this MOSFET?

The gate charge is not specified in the available data.

8. Can this MOSFET handle high currents?

Yes, its low on-resistance enables it to handle high currents efficiently.

9. What is the package quantity for bulk orders?

The package quantity is 3,000 units in a large tape and reel (T&R).

10. Is the CSD17318Q2T suitable for industrial applications?

Yes, it is well-suited for industrial power management and control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:879 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$1.13
219

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD17318Q2T CSD17313Q2T CSD17318Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 5A (Ta) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 3V, 8V 2.5V, 8V
Rds On (Max) @ Id, Vgs 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V 15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.8V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 2.7 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±10V +10V, -8V ±10V
Input Capacitance (Ciss) (Max) @ Vds 879 pF @ 15 V 340 pF @ 15 V 879 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 16W (Tc) 2.4W (Ta), 17W (Tc) 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

TPD1E1B04DPYT
TPD1E1B04DPYT
Texas Instruments
TVS DIODE 3.6VWM 8.5VC 2X1SON
ADS122U04IPWR
ADS122U04IPWR
Texas Instruments
IC ADC 24BIT SIGMA-DELTA 16TSSOP
ADS1248IPWR
ADS1248IPWR
Texas Instruments
IC ADC 24BIT SIGMA-DELTA 28TSSOP
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
SN65LVDS391DR
SN65LVDS391DR
Texas Instruments
IC DRIVER 4/0 16SOIC
THS4130IDRG4
THS4130IDRG4
Texas Instruments
IC OPAMP DIFF 1 CIRCUIT 8SOIC
CD4093BMT
CD4093BMT
Texas Instruments
IC GATE NAND 4CH 2-INP 14SOIC
SN74AHC594DRG4
SN74AHC594DRG4
Texas Instruments
IC SHIFT REGISTER 8BIT 16-SOIC
SN74AXC1T45DBVR
SN74AXC1T45DBVR
Texas Instruments
IC TRNSLTR BIDIRECTIONAL SOT23-6
BQ24618RGER
BQ24618RGER
Texas Instruments
IC BATT CHG LI-ION 1-6CEL 24VQFN
LT1009CDRG4
LT1009CDRG4
Texas Instruments
IC VREF SHUNT 0.4% 8SOIC
LP2985A-10DBVR
LP2985A-10DBVR
Texas Instruments
IC REG LINEAR 10V 150MA SOT23-5