CSD17318Q2T
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Texas Instruments CSD17318Q2T

Manufacturer No:
CSD17318Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 30V 25A 6WSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17318Q2T is a single N-channel NexFET™ power MOSFET produced by Texas Instruments (TI). This component is designed for high-efficiency power management applications and is housed in a compact 2mm x 2mm SON package. It is particularly suitable for use in portable electronics, automotive systems, and industrial applications due to its low on-resistance and high voltage handling capabilities. The CSD17318Q2T stands out for its excellent thermal performance and reliability, making it a competitive choice for designers seeking to optimize power efficiency in space-constrained designs.

Key Specifications

ParameterValueUnitNotes
PackageSON-2mm x 2mm
Drain-Source Voltage (VDS)30V-
On-Resistance (RDS(on))16.9-
Gate Charge (Qg)Not specifiednC-
Operating Temperature-40 to 125°C-
Package Quantity3,000-Large T&R

Key Features

  • Low on-resistance (16.9mΩ) for high efficiency.
  • Compact 2mm x 2mm SON package for space-constrained designs.
  • High drain-source voltage rating of 30V for robust performance.
  • Excellent thermal performance for reliable operation in demanding environments.

Applications

The CSD17318Q2T is widely used in various applications, including:

  • Portable Electronics: Optimizes power efficiency in smartphones, tablets, and wearable devices.
  • Automotive Systems: Enhances performance in power management modules and motor control systems.
  • Industrial Applications: Provides reliable power switching in automation and control systems.

Q & A

1. What is the package type of the CSD17318Q2T?

The CSD17318Q2T comes in a 2mm x 2mm SON package.

2. What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage is 30V.

3. What is the typical on-resistance of the CSD17318Q2T?

The typical on-resistance is 16.9mΩ.

4. What is the operating temperature range?

The operating temperature range is -40°C to 125°C.

5. Is this MOSFET suitable for automotive applications?

Yes, the CSD17318Q2T is suitable for automotive systems due to its robust performance and reliability.

6. How does the compact package benefit the design?

The 2mm x 2mm SON package is ideal for space-constrained designs, allowing for high-density PCB layouts.

7. What is the gate charge of this MOSFET?

The gate charge is not specified in the available data.

8. Can this MOSFET handle high currents?

Yes, its low on-resistance enables it to handle high currents efficiently.

9. What is the package quantity for bulk orders?

The package quantity is 3,000 units in a large tape and reel (T&R).

10. Is the CSD17318Q2T suitable for industrial applications?

Yes, it is well-suited for industrial power management and control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:879 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD17318Q2T CSD17313Q2T CSD17318Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 5A (Ta) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 3V, 8V 2.5V, 8V
Rds On (Max) @ Id, Vgs 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V 15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.8V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 2.7 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±10V +10V, -8V ±10V
Input Capacitance (Ciss) (Max) @ Vds 879 pF @ 15 V 340 pF @ 15 V 879 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 16W (Tc) 2.4W (Ta), 17W (Tc) 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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