CSD17313Q2T
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Texas Instruments CSD17313Q2T

Manufacturer No:
CSD17313Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5A 6WSON
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The CSD17313Q2T is a 30-V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is optimized for 5-V gate drive and features ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), making it highly efficient in various power management applications. The MOSFET is housed in a small SON 2-mm × 2-mm plastic package, which is Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability.

Key Specifications

Parameter Test Conditions Min Max Unit
BVDSS VGS = 0 V, ID = 250 μA 30 - - V
IDSS VGS = 0 V, VDS = 24 V - - 1 μA μA
IGSS VDS = 0 V, VGS = +10 / –8 V - - 100 nA nA
VGS(th) VDS = VGS, ID = 250 μA 0.9 1.3 1.8 V
RDS(on) VGS = 3 V, ID = 4 A 31 42 - mΩ
RDS(on) VGS = 4.5 V, ID = 4 A 26 32 - mΩ
RDS(on) VGS = 8 V, ID = 4 A 24 30 - mΩ
Qg VGS = 4.5 V 2.1 2.7 - nC
Qgd VGS = 4.5 V 0.4 - - nC
RθJC - - 7.4 °C/W
RθJA - - 67 °C/W

Key Features

  • Optimized for 5-V gate drive
  • Ultra-low gate charge (Qg) and gate-to-drain charge (Qgd)
  • Low thermal resistance
  • Pb-free, RoHS compliant, and halogen-free
  • SON 2-mm × 2-mm plastic package

Applications

  • DC-DC converters
  • Battery and load management applications

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD17313Q2T?

    The maximum drain-to-source voltage (VDS) is 30 V.

  2. What are the typical on-state resistances (RDS(on)) at different gate-to-source voltages (VGS)?

    The typical on-state resistances are 31 mΩ at VGS = 3 V, 26 mΩ at VGS = 4.5 V, and 24 mΩ at VGS = 8 V.

  3. What is the gate charge total (Qg) at VGS = 4.5 V?

    The gate charge total (Qg) at VGS = 4.5 V is typically 2.1 nC.

  4. What is the thermal resistance junction-to-case (RθJC) of the CSD17313Q2T?

    The thermal resistance junction-to-case (RθJC) is 7.4°C/W.

  5. What is the thermal resistance junction-to-ambient (RθJA) of the CSD17313Q2T?

    The thermal resistance junction-to-ambient (RθJA) is 67°C/W.

  6. What are the primary applications of the CSD17313Q2T?

    The primary applications include DC-DC converters and battery and load management applications.

  7. Is the CSD17313Q2T Pb-free and RoHS compliant?

    Yes, the CSD17313Q2T is Pb-free, RoHS compliant, and halogen-free.

  8. What is the package type of the CSD17313Q2T?

    The package type is a SON 2-mm × 2-mm plastic package.

  9. What are the gate-to-source threshold voltage (VGS(th)) ranges?

    The gate-to-source threshold voltage (VGS(th)) ranges from 0.9 V to 1.8 V.

  10. How does the on-state resistance (RDS(on)) vary with temperature?

    The on-state resistance increases with temperature; refer to the normalized on-state resistance vs temperature graph in the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 17W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD17313Q2T CSD17318Q2T CSD17313Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 25A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 2.5V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 8V 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.2V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 4.5 V 6 nC @ 4.5 V 2.7 nC @ 4.5 V
Vgs (Max) +10V, -8V ±10V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 15 V 879 pF @ 15 V 340 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.4W (Ta), 17W (Tc) 16W (Tc) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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