Overview
The STB33N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed for high-performance applications, particularly in power supplies and motor control circuits. It features a low on-state resistance and high current-carrying capability, making it ideal for high-power applications where efficiency and reliability are crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain Source Voltage (VDS) | 650 | V |
| Maximum Continuous Drain Current (ID) | 24 | A |
| On-Resistance (RDS(on)) | 0.14 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Maximum Gate Source Voltage (VGS) | ±25 | V |
| Maximum Power Dissipation (Pd) | 190 | W |
| Typical Gate Charge (Qg) | 41.5 | nC @ 10 V |
| Turn-On Delay Time (td(on)) | 13.5 | ns |
| Rise Time (tr) | 11.5 | ns |
| Turn-Off Delay Time (td(off)) | 72.5 | ns |
| Fall Time (tf) | 9 | ns |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | D²PAK (TO-263) | |
| Pin Count | 3 |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- High reliability and rugged design
Applications
The STB33N65M2 is suitable for various high-power applications, including:
- Server and telecom power supplies
- High power density converters
- Motor control in industrial applications
- Resonant-type switching supplies (LLC converters)
Q & A
- What is the maximum drain-source voltage of the STB33N65M2?
The maximum drain-source voltage is 650 V.
- What is the maximum continuous drain current of the STB33N65M2?
The maximum continuous drain current is 24 A.
- What is the typical on-resistance of the STB33N65M2?
The typical on-resistance is 0.14 Ω.
- What is the gate threshold voltage range of the STB33N65M2?
The gate threshold voltage range is 2 to 4 V.
- What is the maximum gate source voltage of the STB33N65M2?
The maximum gate source voltage is ±25 V.
- What is the maximum power dissipation of the STB33N65M2?
The maximum power dissipation is 190 W.
- What is the typical gate charge of the STB33N65M2 at 10 V?
The typical gate charge is 41.5 nC at 10 V.
- What are the typical turn-on and turn-off delay times of the STB33N65M2?
The typical turn-on delay time is 13.5 ns, and the typical turn-off delay time is 72.5 ns.
- What are the typical rise and fall times of the STB33N65M2?
The typical rise time is 11.5 ns, and the typical fall time is 9 ns.
- In what package is the STB33N65M2 available?
The STB33N65M2 is available in a D²PAK (TO-263) package.
