STF33N65M2
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STMicroelectronics STF33N65M2

Manufacturer No:
STF33N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 24A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF33N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. With its strip layout and improved vertical structure, the STF33N65M2 exhibits low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.117 (typ.), 0.14 (max.) Ω
ID (Drain Current) 24 A
VGS(th) (Gate Threshold Voltage) 2 - 4 V
Tj (Max. Operating Junction Temperature) 150 °C
Tstg (Storage Temperature) -55 to 150 °C
Qg (Total Gate Charge) 41.5 nC
Ciss (Input Capacitance) 1790 pF
Coss (Output Capacitance) 75 pF
Crss (Reverse Transfer Capacitance) 2 pF

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics
  • Available in D²PAK, TO-220FP, TO-220, and I²PAK packages
  • ECOPACK® compliant for environmental sustainability

Applications

  • Switching applications
  • High-efficiency converters
  • Power management systems
  • Industrial and automotive power supplies
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage of the STF33N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STF33N65M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.117 Ω.

  3. What is the maximum drain current of the STF33N65M2?

    The maximum drain current (ID) is 24 A.

  4. What are the available package types for the STF33N65M2?

    The STF33N65M2 is available in D²PAK, TO-220FP, TO-220, and I²PAK packages.

  5. What is the gate threshold voltage range of the STF33N65M2?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  6. Is the STF33N65M2 environmentally compliant?

    Yes, the STF33N65M2 is ECOPACK® compliant, meeting various environmental standards.

  7. What are some typical applications of the STF33N65M2?

    Typical applications include switching applications, high-efficiency converters, power management systems, industrial and automotive power supplies, and motor control and drive systems.

  8. What is the maximum operating junction temperature of the STF33N65M2?

    The maximum operating junction temperature (Tj) is 150 °C.

  9. What is the total gate charge of the STF33N65M2?

    The total gate charge (Qg) is 41.5 nC.

  10. Is the STF33N65M2 100% avalanche tested?

    Yes, the STF33N65M2 is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1790 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP33N65M2
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MOSFET N-CH 650V 24A TO220
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STF33N65M2
MOSFET N-CH 650V 24A TO220FP
STI33N65M2
STI33N65M2
MOSFET N-CH 650V 24A I2PAK

Similar Products

Part Number STF33N65M2 STF33N60M2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 12A, 10V 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41.5 nC @ 10 V 45.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 100 V 1781 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 34W (Tc) 35W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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