STF33N60M2
  • Share:

STMicroelectronics STF33N60M2

Manufacturer No:
STF33N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 26A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhance its switching characteristics and overall performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
VGS (Gate-Source Voltage) ±25 V
ID (Drain Current, continuous at TC = 25°C) 26 A
ID (Drain Current, continuous at TC = 100°C) 16 A
IDM (Drain Current, pulsed) 104 A
PTOT (Total Power Dissipation at TC = 25°C) 35 W
RDS(on) (Static Drain-Source On-Resistance) 0.108 (typ.), 0.125 (max.) Ω
VGS(th) (Gate Threshold Voltage) 2-4 V
Coss (Output Capacitance) 85 pF
Qg (Total Gate Charge) 45.5 nC
Tj (Maximum Junction Temperature) 150 °C
Package TO-220FP

Key Features

  • Extremely low gate charge and input capacitance
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested and Zener-protected
  • Low RDS(on) x area compared to previous generations
  • MDmesh M2 technology with strip layout and improved vertical structure
  • Low gate input resistance
  • High dv/dt ruggedness

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Resonant converters
  • High-efficiency power converters

Q & A

  1. What is the maximum drain-source voltage of the STF33N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 26 A.

  3. What is the typical on-resistance of the STF33N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.108 Ω.

  4. What technology is used in the STF33N60M2?

    The STF33N60M2 uses the MDmesh M2 technology.

  5. What are the key features of the STF33N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STF33N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  7. What is the maximum junction temperature of the STF33N60M2?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the package type of the STF33N60M2?

    The package type is TO-220FP.

  9. What is the total gate charge of the STF33N60M2?

    The total gate charge (Qg) is 45.5 nC.

  10. What is the output capacitance of the STF33N60M2?

    The output capacitance (Coss) is 85 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$5.01
178

Please send RFQ , we will respond immediately.

Same Series
STP33N60M2
STP33N60M2
MOSFET N-CH 600V 26A TO220
STW33N60M2
STW33N60M2
MOSFET N-CH 600V 26A TO247
STI33N60M2
STI33N60M2
MOSFET N-CH 600V 26A I2PAK

Similar Products

Part Number STF33N60M2 STF33N65M2 STF33N60M6 STF33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 125mOhm @ 12.5A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 33.4 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1515 pF @ 100 V 1870 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 34W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN