STF33N60M2
  • Share:

STMicroelectronics STF33N60M2

Manufacturer No:
STF33N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 26A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhance its switching characteristics and overall performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
VGS (Gate-Source Voltage) ±25 V
ID (Drain Current, continuous at TC = 25°C) 26 A
ID (Drain Current, continuous at TC = 100°C) 16 A
IDM (Drain Current, pulsed) 104 A
PTOT (Total Power Dissipation at TC = 25°C) 35 W
RDS(on) (Static Drain-Source On-Resistance) 0.108 (typ.), 0.125 (max.) Ω
VGS(th) (Gate Threshold Voltage) 2-4 V
Coss (Output Capacitance) 85 pF
Qg (Total Gate Charge) 45.5 nC
Tj (Maximum Junction Temperature) 150 °C
Package TO-220FP

Key Features

  • Extremely low gate charge and input capacitance
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested and Zener-protected
  • Low RDS(on) x area compared to previous generations
  • MDmesh M2 technology with strip layout and improved vertical structure
  • Low gate input resistance
  • High dv/dt ruggedness

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Resonant converters
  • High-efficiency power converters

Q & A

  1. What is the maximum drain-source voltage of the STF33N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 26 A.

  3. What is the typical on-resistance of the STF33N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.108 Ω.

  4. What technology is used in the STF33N60M2?

    The STF33N60M2 uses the MDmesh M2 technology.

  5. What are the key features of the STF33N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STF33N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  7. What is the maximum junction temperature of the STF33N60M2?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the package type of the STF33N60M2?

    The package type is TO-220FP.

  9. What is the total gate charge of the STF33N60M2?

    The total gate charge (Qg) is 45.5 nC.

  10. What is the output capacitance of the STF33N60M2?

    The output capacitance (Coss) is 85 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$5.01
178

Please send RFQ , we will respond immediately.

Same Series
STP33N60M2
STP33N60M2
MOSFET N-CH 600V 26A TO220
STF33N60M2
STF33N60M2
MOSFET N-CH 600V 26A TO220FP
STW33N60M2
STW33N60M2
MOSFET N-CH 600V 26A TO247

Similar Products

Part Number STF33N60M2 STF33N65M2 STF33N60M6 STF33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 125mOhm @ 12.5A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 33.4 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1515 pF @ 100 V 1870 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 34W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK