STF33N60M2
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STMicroelectronics STF33N60M2

Manufacturer No:
STF33N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 26A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhance its switching characteristics and overall performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
VGS (Gate-Source Voltage) ±25 V
ID (Drain Current, continuous at TC = 25°C) 26 A
ID (Drain Current, continuous at TC = 100°C) 16 A
IDM (Drain Current, pulsed) 104 A
PTOT (Total Power Dissipation at TC = 25°C) 35 W
RDS(on) (Static Drain-Source On-Resistance) 0.108 (typ.), 0.125 (max.) Ω
VGS(th) (Gate Threshold Voltage) 2-4 V
Coss (Output Capacitance) 85 pF
Qg (Total Gate Charge) 45.5 nC
Tj (Maximum Junction Temperature) 150 °C
Package TO-220FP

Key Features

  • Extremely low gate charge and input capacitance
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested and Zener-protected
  • Low RDS(on) x area compared to previous generations
  • MDmesh M2 technology with strip layout and improved vertical structure
  • Low gate input resistance
  • High dv/dt ruggedness

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Resonant converters
  • High-efficiency power converters

Q & A

  1. What is the maximum drain-source voltage of the STF33N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 26 A.

  3. What is the typical on-resistance of the STF33N60M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.108 Ω.

  4. What technology is used in the STF33N60M2?

    The STF33N60M2 uses the MDmesh M2 technology.

  5. What are the key features of the STF33N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STF33N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  7. What is the maximum junction temperature of the STF33N60M2?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the package type of the STF33N60M2?

    The package type is TO-220FP.

  9. What is the total gate charge of the STF33N60M2?

    The total gate charge (Qg) is 45.5 nC.

  10. What is the output capacitance of the STF33N60M2?

    The output capacitance (Coss) is 85 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF33N60M2 STF33N65M2 STF33N60M6 STF33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 125mOhm @ 12.5A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 33.4 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1515 pF @ 100 V 1870 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 34W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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