STMicroelectronics STB5N52K3

Manufacturer No:: STB5N52K3
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 525V 4.4A D2PAK
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Product Introduction

Overview

The STB5N52K3 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced MDmesh K3 technology. This device is characterized by its high voltage rating of 525 V, low on-resistance of 1.2 Ω (typical), and a high current capability of 4.4 A. The MDmesh K3 technology combines improvements in the vertical structure, enhancing the overall performance and efficiency of the MOSFET.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	525 V
R_DS(on) (On-Resistance)	1.2 Ω (typical)
I_D (Drain Current)	4.4 A
Packaging	D2PAK-3
Status	Obsolete (no longer manufactured)

Key Features

High voltage rating of 525 V, making it suitable for high-power applications.
Low on-resistance of 1.2 Ω (typical), reducing power losses and improving efficiency.
High current capability of 4.4 A, enabling the handling of substantial current loads.
Advanced MDmesh K3 technology with an optimized vertical structure for enhanced performance.

Applications

The STB5N52K3 is designed for use in various high-power applications, including but not limited to:

Power supplies and converters.
Motor control and drives.
Industrial automation and control systems.
High-voltage switching and power management systems.

Q & A

What is the maximum drain-source voltage of the STB5N52K3?
The maximum drain-source voltage (V_DS) is 525 V.
What is the typical on-resistance of the STB5N52K3?
The typical on-resistance (R_DS(on)) is 1.2 Ω.
What is the maximum drain current of the STB5N52K3?
The maximum drain current (I_D) is 4.4 A.
What packaging is the STB5N52K3 available in?
The STB5N52K3 is available in D2PAK-3 packaging.
Is the STB5N52K3 still in production?
No, the STB5N52K3 is obsolete and no longer manufactured.
What technology does the STB5N52K3 use?
The STB5N52K3 uses STMicroelectronics' advanced MDmesh K3 technology.
What are some common applications for the STB5N52K3?
Common applications include power supplies, motor control, industrial automation, and high-voltage switching systems.
Where can I find detailed specifications for the STB5N52K3?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors.
Are there any substitutes available for the STB5N52K3?
Yes, substitutes such as the STD5N52K3 are available.
What is the significance of the MDmesh K3 technology in the STB5N52K3?
The MDmesh K3 technology enhances the performance and efficiency of the MOSFET by optimizing the vertical structure.

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Similar Products

Part Number	STB5N52K3	STB7N52K3	STB5N62K3	STB6N52K3
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	525 V	525 V	620 V	525 V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)	6A (Tc)	4.2A (Tc)	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V	980mOhm @ 3.1A, 10V	1.6Ohm @ 2.1A, 10V	1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA	4.5V @ 50µA	4.5V @ 50µA	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V	34 nC @ 10 V	26 nC @ 10 V	26 nC @ 10 V
Vgs (Max)	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	545 pF @ 100 V	737 pF @ 100 V	680 pF @ 50 V	670 pF @ 50 V
FET Feature	-	-	-	-
Power Dissipation (Max)	70W (Tc)	90W (Tc)	70W (Tc)	70W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

Related Product By Brand

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	525 V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	545 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	70W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB