2N7002-T1-E3
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Vishay Siliconix 2N7002-T1-E3

Manufacturer No:
2N7002-T1-E3
Manufacturer:
Vishay Siliconix
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA TO236
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002-T1-E3 is an N-Channel MOSFET transistor manufactured by Vishay Siliconix. This component is designed for high-performance switching applications and is known for its low on-resistance, low threshold voltage, and fast switching speeds. The 2N7002-T1-E3 is part of the TrenchFET® family, which offers advanced power MOSFET technology. It is packaged in a SOT-23 (TO-236) case, making it suitable for surface mount applications.

Key Specifications

Parameter Symbol Limit/Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 115 mA A
Power Dissipation (Max) PD 200 mW W
On-Resistance (RDS(on)) at VGS = 10 V RDS(on) 7.5 Ω Ω
Gate Threshold Voltage VGS(th) 2.1 V V
Turn On Delay Time td(on) 7 ns ns
Turn Off Delay Time td(off) 11 ns ns
Input Capacitance Ciss 5 pF pF
Package Type - SOT-23 (TO-236) -
Number of Pins - 3 -

Key Features

  • Low on-resistance: 7.5 Ω at VGS = 10 V
  • Low threshold voltage: 2.1 V (typ.)
  • Fast switching speed: Turn on delay time of 7 ns and turn off delay time of 11 ns
  • Low input capacitance: 5 pF
  • Low input and output leakage
  • TrenchFET® power MOSFET technology
  • 2000 V ESD protection
  • Lead-free and RoHS compliant

Applications

  • Direct logic-level interface: TTL/CMOS
  • Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
  • Battery-operated systems
  • Solid-state relays
  • High-speed circuits

Q & A

  1. What is the maximum drain-source voltage of the 2N7002-T1-E3?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical gate threshold voltage of the 2N7002-T1-E3?

    The typical gate threshold voltage (VGS(th)) is 2.1 V.

  3. What is the continuous drain current rating at 25°C for the 2N7002-T1-E3?

    The continuous drain current (ID) at 25°C is 115 mA.

  4. What is the on-resistance (RDS(on)) of the 2N7002-T1-E3 at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 7.5 Ω.

  5. What is the package type of the 2N7002-T1-E3?

    The package type is SOT-23 (TO-236).

  6. Is the 2N7002-T1-E3 RoHS compliant?

    Yes, the 2N7002-T1-E3 is RoHS compliant.

  7. What are the typical turn-on and turn-off delay times for the 2N7002-T1-E3?

    The typical turn-on delay time is 7 ns, and the typical turn-off delay time is 11 ns.

  8. What is the input capacitance of the 2N7002-T1-E3?

    The input capacitance (Ciss) is 5 pF.

  9. What are some common applications for the 2N7002-T1-E3?

    Common applications include direct logic-level interfaces, drivers for relays and solenoids, battery-operated systems, and solid-state relays.

  10. Does the 2N7002-T1-E3 have ESD protection?

    Yes, the 2N7002-T1-E3 has 2000 V ESD protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002-T1-GE3
2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236
2N7002-E3
2N7002-E3
MOSFET N-CH 60V 115MA TO236

Similar Products

Part Number 2N7002-T1-E3 2N7002-T1-GE3 2N7002K-T1-E3 2N7002E-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 300mA (Ta) 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 30 pF @ 25 V 21 pF @ 5 V
FET Feature - - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236 TO-236 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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