IRF840PBF
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Vishay Siliconix IRF840PBF

Manufacturer No:
IRF840PBF
Manufacturer:
Vishay Siliconix
Package:
Tube
Description:
MOSFET N-CH 500V 8A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The IRF840PBF is a high-performance N-Channel power MOSFET manufactured by Vishay Siliconix. This third-generation MOSFET is designed to provide a superior combination of fast switching, rugged device design, and low on-resistance. It is packaged in the TO-220AB configuration, making it suitable for a wide range of power management and switching applications.

Key Specifications

ParameterSymbolLimitUnit
Drain-source voltageVDS500V
Gate-source voltageVGS±20V
Continuous drain current at VGS = 10 V, TC = 25 °CID8.0A
Pulsed drain currentIDM32A
On-resistance at VGS = 10 VRDS(on)0.85Ω
Total gate chargeQg63nC
Gate-source chargeQgs9.3nC
Gate-drain chargeQgd32nC
PackageTO-220AB

Key Features

  • Fast switching capabilities
  • Ruggedized device design for reliability
  • Low on-resistance (RDS(on) = 0.85 Ω at VGS = 10 V)
  • High drain-source voltage (VDS = 500 V)
  • High continuous drain current (ID = 8.0 A at VGS = 10 V, TC = 25 °C)
  • Lead (Pb)-free and halogen-free options available

Applications

The IRF840PBF is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and high-power audio systems
  • Switching and power management in industrial and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the IRF840PBF?
    The maximum drain-source voltage (VDS) is 500 V.
  2. What is the continuous drain current rating at 25 °C?
    The continuous drain current (ID) at VGS = 10 V and TC = 25 °C is 8.0 A.
  3. What is the on-resistance of the IRF840PBF at VGS = 10 V?
    The on-resistance (RDS(on)) at VGS = 10 V is 0.85 Ω.
  4. What is the maximum gate-source voltage?
    The maximum gate-source voltage (VGS) is ±20 V.
  5. What package type is the IRF840PBF available in?
    The IRF840PBF is available in the TO-220AB package.
  6. Is the IRF840PBF lead-free and halogen-free?
    Yes, lead-free and halogen-free options are available.
  7. What are some common applications for the IRF840PBF?
    Common applications include power supplies, motor control, audio amplifiers, and high-frequency switching applications.
  8. What is the total gate charge of the IRF840PBF?
    The total gate charge (Qg) is 63 nC.
  9. What is the pulsed drain current rating?
    The pulsed drain current (IDM) is 32 A.
  10. At what temperature is the continuous drain current reduced to 5.1 A?
    The continuous drain current is reduced to 5.1 A at a junction temperature (TC) of 100 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Same Series
IRF840
IRF840
MOSFET N-CH 500V 8A TO220AB

Similar Products

Part Number IRF840PBF IRF840SPBF IRF820PBF IRF830PBF IRF840APBF IRF840BPBF IRF840LPBF
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 8A (Tc) 2.5A (Tc) 4.5A (Tc) 8A (Tc) 8.7A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V 850mOhm @ 4.8A, 10V 3Ohm @ 1.5A, 10V 1.5Ohm @ 2.7A, 10V 850mOhm @ 4.8A, 10V 850mOhm @ 4A, 10V 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 63 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 30 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1300 pF @ 25 V 360 pF @ 25 V 610 pF @ 25 V 1018 pF @ 25 V 527 pF @ 100 V 1300 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 125W (Tc) 3.1W (Ta), 125W (Tc) 50W (Tc) 74W (Tc) 125W (Tc) 156W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB D²PAK (TO-263) TO-220AB TO-220AB TO-220AB TO-220AB D²PAK (TO-263)
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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