IRF840PBF-BE3
  • Share:

Vishay Siliconix IRF840PBF-BE3

Manufacturer No:
IRF840PBF-BE3
Manufacturer:
Vishay Siliconix
Package:
Tube
Description:
MOSFET N-CH 500V 8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF840PBF-BE3 is a high-performance N-Channel power MOSFET produced by Vishay Siliconix. This device is part of the HEXFET family and is known for its robust characteristics and reliability in various power management applications. The IRF840PBF-BE3 is lead-free and halogen-free, making it compliant with current environmental standards. It features a TO-220AB package, which provides excellent thermal management and mechanical support.

Key Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25 °C) ID 8.0 A
Pulsed Drain Current IDM 32 A
Maximum Power Dissipation (TC = 25 °C) PD 125 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source On-State Resistance (VGS = 10 V, ID = 4.8 A) RDS(on) 0.85 Ω
Total Gate Charge (VGS = 10 V, ID = 8 A, VDS = 400 V) Qg 63 nC
Gate-Source Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 - 4.0 V
Input Capacitance (VGS = 0 V, VDS = 25 V, f = 1.0 MHz) Ciss 1300 pF

Key Features

  • High Voltage and Current Handling: The IRF840PBF-BE3 can handle up to 500 V drain-source voltage and 8 A continuous drain current, making it suitable for high-power applications.
  • Low On-State Resistance: With an RDS(on) of 0.85 Ω at VGS = 10 V and ID = 4.8 A, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast turn-on and turn-off times, with a turn-on delay time of 14 ns and a turn-off delay time of 49 ns, enhancing its performance in switching applications.
  • Environmental Compliance: The IRF840PBF-BE3 is lead-free and halogen-free, aligning with current environmental regulations.
  • Robust Thermal Management: The TO-220AB package provides excellent thermal management, ensuring reliable operation under various conditions.

Applications

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies due to its high voltage and current handling capabilities.
  • Motor Control: Ideal for motor drive applications, including DC and AC motor control systems.
  • Switching Regulators: Used in switching regulators and power management circuits where fast switching times and low on-state resistance are critical.
  • Automotive Systems: Can be used in automotive systems that require high reliability and robust performance.

Q & A

  1. What is the maximum drain-source voltage of the IRF840PBF-BE3?

    The maximum drain-source voltage is 500 V.

  2. What is the continuous drain current rating of the IRF840PBF-BE3 at 25 °C?

    The continuous drain current rating is 8.0 A.

  3. What is the typical on-state resistance of the IRF840PBF-BE3?

    The typical on-state resistance (RDS(on)) is 0.85 Ω at VGS = 10 V and ID = 4.8 A.

  4. What is the total gate charge of the IRF840PBF-BE3?

    The total gate charge (Qg) is 63 nC at VGS = 10 V, ID = 8 A, and VDS = 400 V.

  5. What is the operating junction temperature range of the IRF840PBF-BE3?

    The operating junction temperature range is -55 to +150 °C.

  6. Is the IRF840PBF-BE3 lead-free and halogen-free?

    Yes, the IRF840PBF-BE3 is lead-free and halogen-free.

  7. What is the package type of the IRF840PBF-BE3?

    The package type is TO-220AB.

  8. What are the typical turn-on and turn-off delay times of the IRF840PBF-BE3?

    The typical turn-on delay time is 14 ns, and the typical turn-off delay time is 49 ns.

  9. What is the maximum power dissipation of the IRF840PBF-BE3 at 25 °C?

    The maximum power dissipation is 125 W.

  10. What are some common applications of the IRF840PBF-BE3?

    Common applications include power supplies, motor control, switching regulators, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.98
396

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP

Similar Products

Part Number IRF840PBF-BE3 IRF820PBF-BE3 IRF830PBF-BE3 IRF840APBF-BE3 IRF840BPBF-BE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 2.5A (Tc) 4.5A (Tc) 8A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V 3Ohm @ 1.5A, 10V 1.5Ohm @ 2.7A, 10V 850mOhm @ 4.8A, 10V 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 360 pF @ 25 V 610 pF @ 25 V 1018 pF @ 25 V 527 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 50W (Tc) 74W (Tc) 125W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

2N7002-T1-GE3
2N7002-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236
IRF840PBF-BE3
IRF840PBF-BE3
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
2N7002E-T1-GE3
2N7002E-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 240MA TO236
2N7002K-T1-GE3
2N7002K-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 300MA TO236
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 3.1A SOT23-3
IRF740PBF
IRF740PBF
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
2N7002E-T1-E3
2N7002E-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 240MA SOT23-3
2N7002E
2N7002E
Vishay Siliconix
MOSFET N-CH 60V 240MA SOT23-3
2N7002-E3
2N7002-E3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236
2N7002-T1-E3
2N7002-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236
DG408DY-T1-E3
DG408DY-T1-E3
Vishay Siliconix
IC MULTIPLEXER 8X1 16SOIC