IRF840PBF-BE3
  • Share:

Vishay Siliconix IRF840PBF-BE3

Manufacturer No:
IRF840PBF-BE3
Manufacturer:
Vishay Siliconix
Package:
Tube
Description:
MOSFET N-CH 500V 8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF840PBF-BE3 is a high-performance N-Channel power MOSFET produced by Vishay Siliconix. This device is part of the HEXFET family and is known for its robust characteristics and reliability in various power management applications. The IRF840PBF-BE3 is lead-free and halogen-free, making it compliant with current environmental standards. It features a TO-220AB package, which provides excellent thermal management and mechanical support.

Key Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25 °C) ID 8.0 A
Pulsed Drain Current IDM 32 A
Maximum Power Dissipation (TC = 25 °C) PD 125 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source On-State Resistance (VGS = 10 V, ID = 4.8 A) RDS(on) 0.85 Ω
Total Gate Charge (VGS = 10 V, ID = 8 A, VDS = 400 V) Qg 63 nC
Gate-Source Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 - 4.0 V
Input Capacitance (VGS = 0 V, VDS = 25 V, f = 1.0 MHz) Ciss 1300 pF

Key Features

  • High Voltage and Current Handling: The IRF840PBF-BE3 can handle up to 500 V drain-source voltage and 8 A continuous drain current, making it suitable for high-power applications.
  • Low On-State Resistance: With an RDS(on) of 0.85 Ω at VGS = 10 V and ID = 4.8 A, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast turn-on and turn-off times, with a turn-on delay time of 14 ns and a turn-off delay time of 49 ns, enhancing its performance in switching applications.
  • Environmental Compliance: The IRF840PBF-BE3 is lead-free and halogen-free, aligning with current environmental regulations.
  • Robust Thermal Management: The TO-220AB package provides excellent thermal management, ensuring reliable operation under various conditions.

Applications

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies due to its high voltage and current handling capabilities.
  • Motor Control: Ideal for motor drive applications, including DC and AC motor control systems.
  • Switching Regulators: Used in switching regulators and power management circuits where fast switching times and low on-state resistance are critical.
  • Automotive Systems: Can be used in automotive systems that require high reliability and robust performance.

Q & A

  1. What is the maximum drain-source voltage of the IRF840PBF-BE3?

    The maximum drain-source voltage is 500 V.

  2. What is the continuous drain current rating of the IRF840PBF-BE3 at 25 °C?

    The continuous drain current rating is 8.0 A.

  3. What is the typical on-state resistance of the IRF840PBF-BE3?

    The typical on-state resistance (RDS(on)) is 0.85 Ω at VGS = 10 V and ID = 4.8 A.

  4. What is the total gate charge of the IRF840PBF-BE3?

    The total gate charge (Qg) is 63 nC at VGS = 10 V, ID = 8 A, and VDS = 400 V.

  5. What is the operating junction temperature range of the IRF840PBF-BE3?

    The operating junction temperature range is -55 to +150 °C.

  6. Is the IRF840PBF-BE3 lead-free and halogen-free?

    Yes, the IRF840PBF-BE3 is lead-free and halogen-free.

  7. What is the package type of the IRF840PBF-BE3?

    The package type is TO-220AB.

  8. What are the typical turn-on and turn-off delay times of the IRF840PBF-BE3?

    The typical turn-on delay time is 14 ns, and the typical turn-off delay time is 49 ns.

  9. What is the maximum power dissipation of the IRF840PBF-BE3 at 25 °C?

    The maximum power dissipation is 125 W.

  10. What are some common applications of the IRF840PBF-BE3?

    Common applications include power supplies, motor control, switching regulators, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.98
396

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IRF840PBF-BE3 IRF820PBF-BE3 IRF830PBF-BE3 IRF840APBF-BE3 IRF840BPBF-BE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 2.5A (Tc) 4.5A (Tc) 8A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V 3Ohm @ 1.5A, 10V 1.5Ohm @ 2.7A, 10V 850mOhm @ 4.8A, 10V 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 360 pF @ 25 V 610 pF @ 25 V 1018 pF @ 25 V 527 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 50W (Tc) 74W (Tc) 125W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

2N7002-T1-GE3
2N7002-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236
IRF840PBF-BE3
IRF840PBF-BE3
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
2N7002E-T1-GE3
2N7002E-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 240MA TO236
2N7002K-T1-E3
2N7002K-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 300MA SOT23-3
2N7002K-T1-GE3
2N7002K-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 300MA TO236
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 3.1A SOT23-3
IRF840PBF
IRF840PBF
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
IRF740PBF
IRF740PBF
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
2N7002E-T1-E3
2N7002E-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 240MA SOT23-3
2N7002E
2N7002E
Vishay Siliconix
MOSFET N-CH 60V 240MA SOT23-3
2N7002-E3
2N7002-E3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236