IRF840PBF-BE3
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Vishay Siliconix IRF840PBF-BE3

Manufacturer No:
IRF840PBF-BE3
Manufacturer:
Vishay Siliconix
Package:
Tube
Description:
MOSFET N-CH 500V 8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF840PBF-BE3 is a high-performance N-Channel power MOSFET produced by Vishay Siliconix. This device is part of the HEXFET family and is known for its robust characteristics and reliability in various power management applications. The IRF840PBF-BE3 is lead-free and halogen-free, making it compliant with current environmental standards. It features a TO-220AB package, which provides excellent thermal management and mechanical support.

Key Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25 °C) ID 8.0 A
Pulsed Drain Current IDM 32 A
Maximum Power Dissipation (TC = 25 °C) PD 125 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source On-State Resistance (VGS = 10 V, ID = 4.8 A) RDS(on) 0.85 Ω
Total Gate Charge (VGS = 10 V, ID = 8 A, VDS = 400 V) Qg 63 nC
Gate-Source Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 - 4.0 V
Input Capacitance (VGS = 0 V, VDS = 25 V, f = 1.0 MHz) Ciss 1300 pF

Key Features

  • High Voltage and Current Handling: The IRF840PBF-BE3 can handle up to 500 V drain-source voltage and 8 A continuous drain current, making it suitable for high-power applications.
  • Low On-State Resistance: With an RDS(on) of 0.85 Ω at VGS = 10 V and ID = 4.8 A, this MOSFET minimizes power losses during operation.
  • Fast Switching Times: The device features fast turn-on and turn-off times, with a turn-on delay time of 14 ns and a turn-off delay time of 49 ns, enhancing its performance in switching applications.
  • Environmental Compliance: The IRF840PBF-BE3 is lead-free and halogen-free, aligning with current environmental regulations.
  • Robust Thermal Management: The TO-220AB package provides excellent thermal management, ensuring reliable operation under various conditions.

Applications

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies due to its high voltage and current handling capabilities.
  • Motor Control: Ideal for motor drive applications, including DC and AC motor control systems.
  • Switching Regulators: Used in switching regulators and power management circuits where fast switching times and low on-state resistance are critical.
  • Automotive Systems: Can be used in automotive systems that require high reliability and robust performance.

Q & A

  1. What is the maximum drain-source voltage of the IRF840PBF-BE3?

    The maximum drain-source voltage is 500 V.

  2. What is the continuous drain current rating of the IRF840PBF-BE3 at 25 °C?

    The continuous drain current rating is 8.0 A.

  3. What is the typical on-state resistance of the IRF840PBF-BE3?

    The typical on-state resistance (RDS(on)) is 0.85 Ω at VGS = 10 V and ID = 4.8 A.

  4. What is the total gate charge of the IRF840PBF-BE3?

    The total gate charge (Qg) is 63 nC at VGS = 10 V, ID = 8 A, and VDS = 400 V.

  5. What is the operating junction temperature range of the IRF840PBF-BE3?

    The operating junction temperature range is -55 to +150 °C.

  6. Is the IRF840PBF-BE3 lead-free and halogen-free?

    Yes, the IRF840PBF-BE3 is lead-free and halogen-free.

  7. What is the package type of the IRF840PBF-BE3?

    The package type is TO-220AB.

  8. What are the typical turn-on and turn-off delay times of the IRF840PBF-BE3?

    The typical turn-on delay time is 14 ns, and the typical turn-off delay time is 49 ns.

  9. What is the maximum power dissipation of the IRF840PBF-BE3 at 25 °C?

    The maximum power dissipation is 125 W.

  10. What are some common applications of the IRF840PBF-BE3?

    Common applications include power supplies, motor control, switching regulators, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF840PBF-BE3 IRF820PBF-BE3 IRF830PBF-BE3 IRF840APBF-BE3 IRF840BPBF-BE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 2.5A (Tc) 4.5A (Tc) 8A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V 3Ohm @ 1.5A, 10V 1.5Ohm @ 2.7A, 10V 850mOhm @ 4.8A, 10V 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 38 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 360 pF @ 25 V 610 pF @ 25 V 1018 pF @ 25 V 527 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 50W (Tc) 74W (Tc) 125W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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