2N7002-T1-GE3
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Vishay Siliconix 2N7002-T1-GE3

Manufacturer No:
2N7002-T1-GE3
Manufacturer:
Vishay Siliconix
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA TO236
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-T1-GE3 is a high-performance N-channel power MOSFET manufactured by Vishay Siliconix. This device is designed for reliable switching and amplification applications in a variety of electronic systems. It features a robust construction and low on-resistance, making it suitable for use in harsh operating conditions, including high temperatures and voltage fluctuations.

Key Specifications

Parameter Symbol Test Conditions Limits Unit
Drain-Source Voltage VDS VGS = 0 V, ID = 10 µA 60 V
Gate-Source Voltage VGS - ±20 V
Continuous Drain Current ID TJ = 150 °C, TA = 25 °C 240 mA
Pulsed Drain Current IDM Pulse width ≤ 300 µs, duty cycle ≤ 2% 1300 mA
Power Dissipation PD TA = 25 °C 0.35 W
On-Resistance RDS(on) VGS = 10 V 3 Ω
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 - 2.5 V
Input Capacitance Ciss VDS = 25 V 50 pF
Operating Junction and Storage Temperature Range TJ, Tstg - -55 to 150 °C
Package - - TO-236-3, SC-59, SOT-23-3 -

Key Features

  • High-Performance MOSFET: Offers low on-resistance and high current handling for efficient switching and amplification.
  • Robust Construction: Designed to withstand harsh operating conditions, including high temperatures and voltage fluctuations.
  • Low On-Resistance: 3 Ω at VGS = 10 V.
  • Low Threshold Voltage: 2 V (typical).
  • Low Input Capacitance: 25 pF.
  • Fast Switching Speed: Turn-on time of 13 ns and turn-off time of 18 ns.
  • Low Input and Output Leakage: Ensures minimal power loss.
  • Halogen-Free and RoHS Compliant: Meets environmental standards.

Applications

  • Power Supplies: Suitable for use in power supply circuits requiring high-performance switching.
  • Motor Control Systems: Used in motor control applications where efficient switching is necessary.
  • Audio Equipment: Ideal for audio applications requiring low noise and high fidelity.
  • Automotive Electronics: Used in various automotive electronic systems.
  • Industrial Automation Systems: Applied in industrial automation for reliable and efficient operation.
  • Battery Operated Systems: Suitable for battery-operated devices due to low-voltage operation.
  • Direct Logic-Level Interface: Compatible with TTL/CMOS logic levels.
  • Drivers for Relays, Solenoids, Lamps, etc.: Used to drive various types of loads.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002-T1-GE3?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current (ID) rating of the 2N7002-T1-GE3?

    The continuous drain current (ID) rating is 240 mA at TA = 25 °C.

  3. What is the on-resistance (RDS(on)) of the 2N7002-T1-GE3?

    The on-resistance (RDS(on)) is 3 Ω at VGS = 10 V.

  4. What is the gate-threshold voltage (VGS(th)) of the 2N7002-T1-GE3?

    The gate-threshold voltage (VGS(th)) is typically 2 V.

  5. What is the input capacitance (Ciss) of the 2N7002-T1-GE3?

    The input capacitance (Ciss) is 50 pF at VDS = 25 V.

  6. What is the operating junction and storage temperature range of the 2N7002-T1-GE3?

    The operating junction and storage temperature range is -55 to 150 °C.

  7. Is the 2N7002-T1-GE3 RoHS compliant and halogen-free?

    Yes, the 2N7002-T1-GE3 is RoHS compliant and halogen-free.

  8. What package types are available for the 2N7002-T1-GE3?

    The 2N7002-T1-GE3 is available in TO-236-3, SC-59, and SOT-23-3 packages.

  9. What are some common applications of the 2N7002-T1-GE3?

    Common applications include power supplies, motor control systems, audio equipment, automotive electronics, and industrial automation systems.

  10. Can the 2N7002-T1-GE3 be used in battery-operated systems?

    Yes, it is suitable for battery-operated systems due to its low-voltage operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002-T1-GE3
2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236
2N7002-E3
2N7002-E3
MOSFET N-CH 60V 115MA TO236

Similar Products

Part Number 2N7002-T1-GE3 2N7002E-T1-GE3 2N7002K-T1-GE3 2N7002-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 240mA (Ta) 300mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 21 pF @ 5 V 30 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 350mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236 TO-236 SOT-23-3 (TO-236) TO-236
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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