2N7002-E3
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Vishay Siliconix 2N7002-E3

Manufacturer No:
2N7002-E3
Manufacturer:
Vishay Siliconix
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA TO236
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-E3 is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix. This device is designed for high-efficiency power management applications, offering low on-state resistance, low gate threshold voltage, and fast switching speeds. The 2N7002-E3 is packaged in a small SOT-23 (TO-236) surface mount package, making it suitable for a variety of compact electronic designs.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Gate to Source Voltage (Vgs) ± 20 V
Continuous Drain Current (Id) 0.115 A (at TJ = 150 °C), 0.24 A (max at TJ = 70 °C) A
Pulsed Drain Current (Idm) 1.3 A A
On-Resistance (Rds(on)) 7.5 Ω (at Vgs = 10 V) Ω
Gate Threshold Voltage (Vgs(th)) 1.0 to 2.5 V V
Input Capacitance 25 pF pF
Power Dissipation (Pd) 0.2 W (at TA = 25 °C) W
Operating Junction Temperature -55 to 150 °C °C
Package Style SOT-23 (TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance: The 2N7002-E3 features a low on-state resistance of 7.5 Ω at Vgs = 10 V, enhancing efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage of 1.0 to 2.5 V, this MOSFET can be easily driven without the need for a buffer.
  • Fast Switching Speed: The device offers fast switching speeds, making it suitable for high-speed circuits.
  • Low Input Capacitance: The low input capacitance of 25 pF minimizes the impact on high-frequency operations.
  • Small Surface Mount Package: The SOT-23 package is compact and ideal for space-constrained designs.
  • RoHS Compliant: The 2N7002-E3 is fully compliant with the RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

Applications

  • Direct Logic-Level Interface: Suitable for TTL/CMOS logic-level interfaces.
  • Drivers: Ideal for driving relays, solenoids, lamps, hammers, displays, memories, and other transistors.
  • Battery Operated Systems: Used in battery-operated systems due to its low power consumption and high efficiency.
  • Solid-State Relays: Can be used in solid-state relay applications.
  • Motor Control: Suitable for motor control and other power management functions.

Q & A

  1. What is the drain to source voltage (Vdss) of the 2N7002-E3?

    The drain to source voltage (Vdss) is 60 V.

  2. What is the continuous drain current (Id) of the 2N7002-E3?

    The continuous drain current (Id) is 0.115 A at TJ = 150 °C and up to 0.24 A at TJ = 70 °C.

  3. What is the on-resistance (Rds(on)) of the 2N7002-E3?

    The on-resistance (Rds(on)) is 7.5 Ω at Vgs = 10 V.

  4. What is the gate threshold voltage (Vgs(th)) of the 2N7002-E3?

    The gate threshold voltage (Vgs(th)) ranges from 1.0 to 2.5 V.

  5. Is the 2N7002-E3 RoHS compliant?

    Yes, the 2N7002-E3 is fully compliant with the RoHS Directive 2002/95/EC and is halogen-free.

  6. What is the package style of the 2N7002-E3?

    The package style is SOT-23 (TO-236).

  7. What are the operating junction temperatures for the 2N7002-E3?

    The operating junction temperatures range from -55 to 150 °C.

  8. What are some common applications of the 2N7002-E3?

    Common applications include direct logic-level interfaces, drivers for relays and solenoids, battery-operated systems, and solid-state relays.

  9. Does the 2N7002-E3 have fast switching speeds?

    Yes, the device offers fast switching speeds, making it suitable for high-speed circuits.

  10. Is the 2N7002-E3 suitable for high-efficiency power management?

    Yes, it is designed for high-efficiency power management applications due to its low on-state resistance and other features.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236
Package / Case:TO-236-3, SC-59, SOT-23-3
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