Overview
The 2N7002-E3 is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix. This device is designed for high-efficiency power management applications, offering low on-state resistance, low gate threshold voltage, and fast switching speeds. The 2N7002-E3 is packaged in a small SOT-23 (TO-236) surface mount package, making it suitable for a variety of compact electronic designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (Vdss) | 60 | V |
Gate to Source Voltage (Vgs) | ± 20 | V |
Continuous Drain Current (Id) | 0.115 A (at TJ = 150 °C), 0.24 A (max at TJ = 70 °C) | A |
Pulsed Drain Current (Idm) | 1.3 A | A |
On-Resistance (Rds(on)) | 7.5 Ω (at Vgs = 10 V) | Ω |
Gate Threshold Voltage (Vgs(th)) | 1.0 to 2.5 V | V |
Input Capacitance | 25 pF | pF |
Power Dissipation (Pd) | 0.2 W (at TA = 25 °C) | W |
Operating Junction Temperature | -55 to 150 °C | °C |
Package Style | SOT-23 (TO-236) | |
Mounting Method | Surface Mount |
Key Features
- Low On-Resistance: The 2N7002-E3 features a low on-state resistance of 7.5 Ω at Vgs = 10 V, enhancing efficiency in power management applications.
- Low Gate Threshold Voltage: With a gate threshold voltage of 1.0 to 2.5 V, this MOSFET can be easily driven without the need for a buffer.
- Fast Switching Speed: The device offers fast switching speeds, making it suitable for high-speed circuits.
- Low Input Capacitance: The low input capacitance of 25 pF minimizes the impact on high-frequency operations.
- Small Surface Mount Package: The SOT-23 package is compact and ideal for space-constrained designs.
- RoHS Compliant: The 2N7002-E3 is fully compliant with the RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
Applications
- Direct Logic-Level Interface: Suitable for TTL/CMOS logic-level interfaces.
- Drivers: Ideal for driving relays, solenoids, lamps, hammers, displays, memories, and other transistors.
- Battery Operated Systems: Used in battery-operated systems due to its low power consumption and high efficiency.
- Solid-State Relays: Can be used in solid-state relay applications.
- Motor Control: Suitable for motor control and other power management functions.
Q & A
- What is the drain to source voltage (Vdss) of the 2N7002-E3?
The drain to source voltage (Vdss) is 60 V.
- What is the continuous drain current (Id) of the 2N7002-E3?
The continuous drain current (Id) is 0.115 A at TJ = 150 °C and up to 0.24 A at TJ = 70 °C.
- What is the on-resistance (Rds(on)) of the 2N7002-E3?
The on-resistance (Rds(on)) is 7.5 Ω at Vgs = 10 V.
- What is the gate threshold voltage (Vgs(th)) of the 2N7002-E3?
The gate threshold voltage (Vgs(th)) ranges from 1.0 to 2.5 V.
- Is the 2N7002-E3 RoHS compliant?
Yes, the 2N7002-E3 is fully compliant with the RoHS Directive 2002/95/EC and is halogen-free.
- What is the package style of the 2N7002-E3?
The package style is SOT-23 (TO-236).
- What are the operating junction temperatures for the 2N7002-E3?
The operating junction temperatures range from -55 to 150 °C.
- What are some common applications of the 2N7002-E3?
Common applications include direct logic-level interfaces, drivers for relays and solenoids, battery-operated systems, and solid-state relays.
- Does the 2N7002-E3 have fast switching speeds?
Yes, the device offers fast switching speeds, making it suitable for high-speed circuits.
- Is the 2N7002-E3 suitable for high-efficiency power management?
Yes, it is designed for high-efficiency power management applications due to its low on-state resistance and other features.